Vishay TrenchFET Type N-Channel MOSFET, 201 A, 25 V Enhancement, 4-Pin SO-8 SiJA22DP-T1-GE3

This image is representative of the product range

Currently unavailable
We don't know if this item will be back in stock, RS intend to remove it from our range soon.
Packaging Options:
RS Stock No.:
228-2890
Mfr. Part No.:
SiJA22DP-T1-GE3
Manufacturer:
Vishay
Find similar products by selecting one or more attributes.
Select all

Brand

Vishay

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

201A

Maximum Drain Source Voltage Vds

25V

Series

TrenchFET

Package Type

SO-8

Mount Type

Surface

Pin Count

4

Maximum Drain Source Resistance Rds

0.74mΩ

Channel Mode

Enhancement

Maximum Power Dissipation Pd

48W

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

83nC

Maximum Gate Source Voltage Vgs

20 V

Maximum Operating Temperature

150°C

Standards/Approvals

No

Automotive Standard

No

The Vishay TrenchFET N-channel is 25 V MOSFET.

100 % Rg and UIS tested

Related links