Vishay TrenchFET Type N-Channel MOSFET, 201 A, 25 V Enhancement, 4-Pin SO-8 SiJA22DP-T1-GE3

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Subtotal (1 pack of 5 units)*

SGD10.09

(exc. GST)

SGD11.00

(inc. GST)

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Units
Per unit
Per Pack*
5 - 45SGD2.018SGD10.09
50 - 95SGD1.814SGD9.07
100 - 245SGD1.632SGD8.16
250 - 995SGD1.47SGD7.35
1000 +SGD1.326SGD6.63

*price indicative

Packaging Options:
RS Stock No.:
228-2890
Mfr. Part No.:
SiJA22DP-T1-GE3
Manufacturer:
Vishay
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Brand

Vishay

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

201A

Maximum Drain Source Voltage Vds

25V

Series

TrenchFET

Package Type

SO-8

Mount Type

Surface

Pin Count

4

Maximum Drain Source Resistance Rds

0.74mΩ

Channel Mode

Enhancement

Maximum Gate Source Voltage Vgs

20 V

Maximum Power Dissipation Pd

48W

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

83nC

Maximum Operating Temperature

150°C

Standards/Approvals

No

Automotive Standard

No

The Vishay TrenchFET N-channel is 25 V MOSFET.

100 % Rg and UIS tested

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