Infineon OptiMOS 5 Type N-Channel MOSFET, 100 A, 25 V Enhancement, 8-Pin SuperSO8 5 x 6 BSC009NE2LS5IATMA1
- RS Stock No.:
- 133-9881
- Mfr. Part No.:
- BSC009NE2LS5IATMA1
- Manufacturer:
- Infineon
This image is representative of the product range
Bulk discount available
Subtotal (1 pack of 5 units)*
SGD16.78
(exc. GST)
SGD18.29
(inc. GST)
FREE delivery for orders over $150, or create a business account to enjoy free delivery from just $28
In Stock
- 375 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 5 - 5 | SGD3.356 | SGD16.78 |
| 10 - 95 | SGD3.352 | SGD16.76 |
| 100 - 495 | SGD3.32 | SGD16.60 |
| 500 - 1495 | SGD3.162 | SGD15.81 |
| 1500 + | SGD2.712 | SGD13.56 |
*price indicative
- RS Stock No.:
- 133-9881
- Mfr. Part No.:
- BSC009NE2LS5IATMA1
- Manufacturer:
- Infineon
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 100A | |
| Maximum Drain Source Voltage Vds | 25V | |
| Series | OptiMOS 5 | |
| Package Type | SuperSO8 5 x 6 | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 0.95mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 16 V | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 17nC | |
| Forward Voltage Vf | 0.62V | |
| Maximum Power Dissipation Pd | 74W | |
| Maximum Operating Temperature | 150°C | |
| Length | 5.49mm | |
| Width | 6.35 mm | |
| Height | 1.1mm | |
| Standards/Approvals | RoHS, JESD22, JEDEC J-STD20, IEC61249-2-21 | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 100A | ||
Maximum Drain Source Voltage Vds 25V | ||
Series OptiMOS 5 | ||
Package Type SuperSO8 5 x 6 | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 0.95mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 16 V | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 17nC | ||
Forward Voltage Vf 0.62V | ||
Maximum Power Dissipation Pd 74W | ||
Maximum Operating Temperature 150°C | ||
Length 5.49mm | ||
Width 6.35 mm | ||
Height 1.1mm | ||
Standards/Approvals RoHS, JESD22, JEDEC J-STD20, IEC61249-2-21 | ||
Automotive Standard No | ||
Infineon OptiMOS™5 Power MOSFETs
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
Related links
- Infineon OptiMOS 5 Type N-Channel MOSFET 25 V Enhancement, 8-Pin SuperSO8 5 x 6
- Infineon Half Bridge OptiMOS-TM6 Type N-Channel Power MOSFET 40 V Enhancement, 8-Pin SuperSO8 5 x 6
- Infineon Half Bridge OptiMOS-TM6 Type N-Channel Power MOSFET 40 V N, 8-Pin SuperSO8 5 x 6
- Infineon IAUC Type N-Channel MOSFET 40 V Enhancement, 8-Pin SuperSO8 5 x 6 IAUC100N04S6L025ATMA1
- Infineon IAUC Type N-Channel MOSFET 40 V Enhancement, 8-Pin SuperSO8 5 x 6 IAUC100N04S6L020ATMA1
- Infineon IAUC Type N-Channel MOSFET 40 V Enhancement, 8-Pin SuperSO8 5 x 6
- Infineon IAUC Type N-Channel MOSFET 40 V Enhancement, 8-Pin SuperSO8 5 x 6 IAUC100N04S6L014ATMA1
- Infineon IPG20N06S4L-14A 2 Type N-Channel MOSFET 60 V Enhancement, 8-Pin SuperSO8 5 x 6 IPG20N06S4L14AATMA1