Infineon OptiMOS N channel-Channel Power MOSFET, 44 A, 200 V Enhancement, 8-Pin SuperSO8 5 x 6 ISC300N20NM6ATMA1

N
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Subtotal (1 unit)*

SGD3.07

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SGD3.35

(inc. GST)

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Units
Per unit
1 - 9SGD3.07
10 - 24SGD2.58
25 - 99SGD1.61
100 - 499SGD1.55
500 +SGD1.51

*price indicative

RS Stock No.:
762-982
Mfr. Part No.:
ISC300N20NM6ATMA1
Manufacturer:
Infineon
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Brand

Infineon

Product Type

Power MOSFET

Channel Type

N channel

Maximum Continuous Drain Current Id

44A

Maximum Drain Source Voltage Vds

200V

Series

OptiMOS

Package Type

SuperSO8 5 x 6

Mount Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance Rds

30mΩ

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Forward Voltage Vf

1V

Maximum Power Dissipation Pd

136W

Typical Gate Charge Qg @ Vgs

17nC

Maximum Operating Temperature

175°C

Length

6.1mm

Standards/Approvals

RoHS

Height

1.2mm

Automotive Standard

No

COO (Country of Origin):
CN
The Infineon OptiMOS 6 Power Transistor is a 200 V N-channel device designed for efficient power applications. It features low on-resistance, and minimal reverse recovery charge (Qrr). Additionally, it meets RoHS standards, is halogen-free, and is classified as MSL 1 according to J-STD-020.

100% avalanche tested

175°C operating temperature

High avalanche energy rating

Pb‑free lead plating

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