Infineon OptiMOS N channel-Channel Power MOSFET, 44 A, 200 V Enhancement, 8-Pin SuperSO8 5 x 6 ISC300N20NM6ATMA1
- RS Stock No.:
- 762-982
- Mfr. Part No.:
- ISC300N20NM6ATMA1
- Manufacturer:
- Infineon
N
Bulk discount available
Subtotal (1 unit)*
SGD3.07
(exc. GST)
SGD3.35
(inc. GST)
FREE delivery for orders over $150, or create a business account to enjoy free delivery from just $28
Temporarily out of stock
- 4,450 unit(s) shipping from 13 April 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit |
|---|---|
| 1 - 9 | SGD3.07 |
| 10 - 24 | SGD2.58 |
| 25 - 99 | SGD1.61 |
| 100 - 499 | SGD1.55 |
| 500 + | SGD1.51 |
*price indicative
- RS Stock No.:
- 762-982
- Mfr. Part No.:
- ISC300N20NM6ATMA1
- Manufacturer:
- Infineon
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | Power MOSFET | |
| Channel Type | N channel | |
| Maximum Continuous Drain Current Id | 44A | |
| Maximum Drain Source Voltage Vds | 200V | |
| Series | OptiMOS | |
| Package Type | SuperSO8 5 x 6 | |
| Mount Type | Surface Mount | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 30mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1V | |
| Maximum Power Dissipation Pd | 136W | |
| Typical Gate Charge Qg @ Vgs | 17nC | |
| Maximum Operating Temperature | 175°C | |
| Length | 6.1mm | |
| Standards/Approvals | RoHS | |
| Height | 1.2mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type Power MOSFET | ||
Channel Type N channel | ||
Maximum Continuous Drain Current Id 44A | ||
Maximum Drain Source Voltage Vds 200V | ||
Series OptiMOS | ||
Package Type SuperSO8 5 x 6 | ||
Mount Type Surface Mount | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 30mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1V | ||
Maximum Power Dissipation Pd 136W | ||
Typical Gate Charge Qg @ Vgs 17nC | ||
Maximum Operating Temperature 175°C | ||
Length 6.1mm | ||
Standards/Approvals RoHS | ||
Height 1.2mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
The Infineon OptiMOS 6 Power Transistor is a 200 V N-channel device designed for efficient power applications. It features low on-resistance, and minimal reverse recovery charge (Qrr). Additionally, it meets RoHS standards, is halogen-free, and is classified as MSL 1 according to J-STD-020.
100% avalanche tested
175°C operating temperature
High avalanche energy rating
Pb‑free lead plating
Related links
- Infineon Half Bridge OptiMOS-TM6 Type N-Channel Power MOSFET 40 V Enhancement, 8-Pin SuperSO8 5 x 6
- Infineon Half Bridge OptiMOS-TM6 Type N-Channel Power MOSFET 40 V N, 8-Pin SuperSO8 5 x 6
- Infineon Half Bridge OptiMOS-TM6 Type N-Channel Power MOSFET 40 V N, 8-Pin SuperSO8 5 x 6 IAUC60N04S6L030HATMA1
- Infineon OptiMOS 5 Type N-Channel MOSFET 25 V Enhancement, 8-Pin SuperSO8 5 x 6
- Infineon OptiMOS 5 Type N-Channel MOSFET 25 V Enhancement, 8-Pin SuperSO8 5 x 6 BSC009NE2LS5IATMA1
- Infineon Half Bridge OptiMOSTM Type N-Channel Power Transistor 40 V Enhancement, 8-Pin SuperSO8 5 x 6
- Infineon Half Bridge IAUC60N04S6N050H Type N-Channel Power Transistor 40 V Enhancement, 8-Pin SuperSO8 5 x 6
- Infineon IPG20N06S4L-14A 2 Type N-Channel MOSFET 60 V Enhancement, 8-Pin SuperSO8 5 x 6
