Infineon Half Bridge OptiMOS-TM6 Type N-Channel Power MOSFET, 60 A, 40 V Enhancement, 8-Pin SuperSO8 5 x 6

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Subtotal (1 pack of 2 units)*

SGD5.42

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SGD5.90

(inc. GST)

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Per Pack*
2 - 8SGD2.71SGD5.42
10 - 98SGD2.435SGD4.87
100 - 248SGD2.19SGD4.38
250 - 498SGD1.98SGD3.96
500 +SGD1.785SGD3.57

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Packaging Options:
RS Stock No.:
249-6892
Mfr. Part No.:
IAUC60N04S6N031HATMA1
Manufacturer:
Infineon
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Brand

Infineon

Product Type

Power MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

60A

Maximum Drain Source Voltage Vds

40V

Package Type

SuperSO8 5 x 6

Series

OptiMOS-TM6

Pin Count

8

Channel Mode

Enhancement

Maximum Power Dissipation Pd

75W

Maximum Gate Source Voltage Vgs

20 V

Forward Voltage Vf

1.1V

Typical Gate Charge Qg @ Vgs

23nC

Minimum Operating Temperature

-55°C

Transistor Configuration

Half Bridge

Maximum Operating Temperature

175°C

Standards/Approvals

RoHS

Automotive Standard

AEC-Q101

The Infineon OptiMOS is power MOSFET for automotive applications. Operating channel is N. It is AEC Q101 qualified. MSL1 up to 260°C peak reflow. Green Product (RoHS compliant) and it is 100% Avalanche tested.

175°C operating temperature

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