Infineon HEXFET Type N-Channel MOSFET, 110 A, 55 V Enhancement, 3-Pin TO-220

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Subtotal (1 tube of 50 units)*

SGD65.65

(exc. GST)

SGD71.55

(inc. GST)

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Units
Per unit
Per Tube*
50 - 200SGD1.313SGD65.65
250 - 950SGD1.306SGD65.30
1000 - 2450SGD1.276SGD63.80
2500 - 4950SGD1.203SGD60.15
5000 +SGD1.066SGD53.30

*price indicative

RS Stock No.:
124-9000
Mfr. Part No.:
IRF3205ZPBF
Manufacturer:
Infineon
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Brand

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

110A

Maximum Drain Source Voltage Vds

55V

Package Type

TO-220

Series

HEXFET

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

7mΩ

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

20 V

Maximum Power Dissipation Pd

170W

Typical Gate Charge Qg @ Vgs

76nC

Forward Voltage Vf

1.3V

Maximum Operating Temperature

175°C

Height

8.77mm

Width

4.69 mm

Standards/Approvals

No

Length

10.54mm

Automotive Standard

No

COO (Country of Origin):
MX

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