Starpower DOSEMI Single Switch-Channel SiC Mosfet without Diode, 64 A, 1.2 kV Enhancement, 4-Pin Tape & Reel
- RS Stock No.:
- 427-757
- Mfr. Part No.:
- DM400S12TDRB
- Manufacturer:
- Starpower
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Units | Per unit | Saving |
|---|---|---|
| 1 - 9 | SGD18.53 | - |
| 10 - 99 | SGD16.66 | SGD18.70 |
| 100 - 499 | SGD15.37 | SGD316.00 |
| 500 - 999 | SGD14.26 | SGD2,135.00 |
| 1000 + | SGD11.58 | SGD6,950.00 |
*price indicative
- RS Stock No.:
- 427-757
- Mfr. Part No.:
- DM400S12TDRB
- Manufacturer:
- Starpower
Specifications
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Starpower | |
| Channel Type | Single Switch | |
| Product Type | SiC Mosfet without Diode | |
| Maximum Continuous Drain Current Id | 64A | |
| Maximum Drain Source Voltage Vds | 1.2kV | |
| Series | DOSEMI | |
| Package Type | Tape & Reel | |
| Mount Type | Through Hole | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 55.2mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 22V | |
| Minimum Operating Temperature | -40°C | |
| Forward Voltage Vf | 3.85V | |
| Maximum Power Dissipation Pd | 268W | |
| Typical Gate Charge Qg @ Vgs | 86.6nC | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Starpower | ||
Channel Type Single Switch | ||
Product Type SiC Mosfet without Diode | ||
Maximum Continuous Drain Current Id 64A | ||
Maximum Drain Source Voltage Vds 1.2kV | ||
Series DOSEMI | ||
Package Type Tape & Reel | ||
Mount Type Through Hole | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 55.2mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 22V | ||
Minimum Operating Temperature -40°C | ||
Forward Voltage Vf 3.85V | ||
Maximum Power Dissipation Pd 268W | ||
Typical Gate Charge Qg @ Vgs 86.6nC | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
The Starpower MOSFET Power Discrete provides ultra low conduction loss as well as low switching loss. They are designed for the applications such as hybrid and electric vehicle.
SiC power MOSFET
Low RDS(on)
Low inductance case avoid oscillations
ROHS
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