ROHM BSM 2 Type N-Channel SiC Power Module Enhancement, 4-Pin BSM180D12P3C007
- RS Stock No.:
- 144-2254
- Mfr. Part No.:
- BSM180D12P3C007
- Manufacturer:
- ROHM
This image is representative of the product range
Subtotal (1 tray of 12 units)*
SGD11,874.144
(exc. GST)
SGD12,942.816
(inc. GST)
Stock information currently inaccessible - Please check back later
Units | Per unit | Per Tray* |
|---|---|---|
| 12 + | SGD989.512 | SGD11,874.14 |
*price indicative
- RS Stock No.:
- 144-2254
- Mfr. Part No.:
- BSM180D12P3C007
- Manufacturer:
- ROHM
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | ROHM | |
| Channel Type | Type N | |
| Product Type | SiC Power Module | |
| Series | BSM | |
| Pin Count | 4 | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -40°C | |
| Maximum Operating Temperature | 150°C | |
| Width | 45.6 mm | |
| Length | 122mm | |
| Height | 17mm | |
| Number of Elements per Chip | 2 | |
| Select all | ||
|---|---|---|
Brand ROHM | ||
Channel Type Type N | ||
Product Type SiC Power Module | ||
Series BSM | ||
Pin Count 4 | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -40°C | ||
Maximum Operating Temperature 150°C | ||
Width 45.6 mm | ||
Length 122mm | ||
Height 17mm | ||
Number of Elements per Chip 2 | ||
- COO (Country of Origin):
- JP
SiC Power Modules, ROHM
The Module consists of a Silicon-Carbide (SiC) DMOS Power FET Devices with a Schottky Barrier Diode (SBD) across the Drain and Source.
Half-Bridge configuration
Low Surge Current
Low Power Switching Losses
High-Speed Switching
Low Operating Temperature
MOSFET Transistors, ROHM Semiconductor
Note
BSM180D12P2C101 SiC Power Module does not include Schottky Barrier Diodes.
Related links
- ROHM BSM 2 Type N-Channel SiC Power Module Enhancement, 4-Pin BSM180D12P3C007
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- ROHM Half Bridge BSM Type N-Channel SiC Power Module 1200 V Enhancement, 4-Pin BSM120D12P2C005
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