ROHM BSM 2 Type N-Channel SiC Power Module Enhancement, 4-Pin BSM180D12P3C007

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Subtotal (1 unit)*

SGD1,039.25

(exc. GST)

SGD1,132.78

(inc. GST)

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Units
Per unit
1 - 3SGD1,039.25
4 - 7SGD1,023.66
8 +SGD997.20

*price indicative

RS Stock No.:
144-2259
Mfr. Part No.:
BSM180D12P3C007
Manufacturer:
ROHM
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Brand

ROHM

Channel Type

Type N

Product Type

SiC Power Module

Series

BSM

Pin Count

4

Channel Mode

Enhancement

Minimum Operating Temperature

-40°C

Maximum Operating Temperature

150°C

Length

122mm

Height

17mm

Width

45.6 mm

Number of Elements per Chip

2

COO (Country of Origin):
JP

SiC Power Modules, ROHM


The Module consists of a Silicon-Carbide (SiC) DMOS Power FET Devices with a Schottky Barrier Diode (SBD) across the Drain and Source.

Half-Bridge configuration

Low Surge Current

Low Power Switching Losses

High-Speed Switching

Low Operating Temperature

MOSFET Transistors, ROHM Semiconductor


Note

BSM180D12P2C101 SiC Power Module does not include Schottky Barrier Diodes.

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