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    Dual SiC N-Channel SiC Power Module, 180 A, 1200 V, 4-Pin C ROHM BSM180D12P3C007

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    Bulk discount available

    Subtotal (1 unit)**

    SGD832.80

    (exc. GST)

    SGD907.75

    (inc. GST)

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    Temporarily out of stock - back order for despatch 04/08/2025, delivery within 4 working days from despatch date*

    * Delivery dates may change based on your chosen quantity and delivery address.

    Units
    Per unit
    1 - 3SGD832.80
    4 - 7SGD820.31
    8 +SGD799.11

    **price indicative

    RS Stock No.:
    144-2259
    Mfr. Part No.:
    BSM180D12P3C007
    Manufacturer:
    ROHM
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    Manufacturer

    ROHM

    Channel Type

    N

    Maximum Continuous Drain Current

    180 A

    Maximum Drain Source Voltage

    1200 V

    Series

    BSM

    Package Type

    C

    Mounting Type

    Surface Mount

    Pin Count

    4

    Channel Mode

    Enhancement

    Maximum Gate Threshold Voltage

    5.6V

    Minimum Gate Threshold Voltage

    2.7V

    Maximum Power Dissipation

    880 W

    Width

    45.6mm

    Number of Elements per Chip

    2

    Maximum Operating Temperature

    +150 °C

    Transistor Material

    SiC

    Length

    122mm

    Minimum Operating Temperature

    -40 °C

    Height

    17mm

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