STMicroelectronics Type N-Channel MOSFET, 7 A, 1200 V Enhancement, 3-Pin Tape & Reel STH12N120K5-2AG

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SGD17.53

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SGD19.11

(inc. GST)

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1 - 9SGD17.53
10 - 99SGD16.65
100 - 249SGD15.82
250 - 499SGD15.02
500 +SGD14.27

*price indicative

Packaging Options:
RS Stock No.:
261-5047
Mfr. Part No.:
STH12N120K5-2AG
Manufacturer:
STMicroelectronics
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Brand

STMicroelectronics

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

7A

Maximum Drain Source Voltage Vds

1200V

Package Type

Tape & Reel

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

1.9Ω

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

36nC

Maximum Gate Source Voltage Vgs

30 V

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

150°C

Height

4.7mm

Length

15.8mm

Width

10.4 mm

Standards/Approvals

No

Automotive Standard

No

COO (Country of Origin):
CN
The STMicroelectronics high voltage N-channel power MOSFET is designed using MDmesh K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency.

AEC-Q101 qualified

Industry’s lowest RDS(on) x area

Industry’s best FoM (figure of merit)

Ultra-low gate charge

100% avalanche tested

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