Starpower DOSEMI Single Switch-Channel SiC Mosfet without Diode, 37 A, 1.2 kV Enhancement, 4-Pin Tape & Reel
- RS Stock No.:
- 427-759
- Mfr. Part No.:
- DM800S12TDRB
- Manufacturer:
- Starpower
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SGD11.17
(exc. GST)
SGD12.18
(inc. GST)
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In Stock
- Plus 31 unit(s) shipping from 09 November 2026
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Units | Per unit | Saving |
|---|---|---|
| 1 - 9 | SGD11.17 | - |
| 10 - 99 | SGD10.05 | 10% |
| 100 - 499 | SGD9.26 | 17% |
| 500 - 999 | SGD8.61 | 22% |
| 1000 + | SGD7.00 | 37% |
*price indicative
- RS Stock No.:
- 427-759
- Mfr. Part No.:
- DM800S12TDRB
- Manufacturer:
- Starpower
Specifications
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Starpower | |
| Channel Type | Single Switch | |
| Product Type | SiC Mosfet without Diode | |
| Maximum Continuous Drain Current Id | 37A | |
| Maximum Drain Source Voltage Vds | 1.2kV | |
| Package Type | Tape & Reel | |
| Series | DOSEMI | |
| Mount Type | Through Hole | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 105mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 36nC | |
| Maximum Power Dissipation Pd | 162W | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 4.1V | |
| Maximum Gate Source Voltage Vgs | 22V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Starpower | ||
Channel Type Single Switch | ||
Product Type SiC Mosfet without Diode | ||
Maximum Continuous Drain Current Id 37A | ||
Maximum Drain Source Voltage Vds 1.2kV | ||
Package Type Tape & Reel | ||
Series DOSEMI | ||
Mount Type Through Hole | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 105mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 36nC | ||
Maximum Power Dissipation Pd 162W | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 4.1V | ||
Maximum Gate Source Voltage Vgs 22V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
The Starpower MOSFET Power Discrete provides ultralow conduction loss as well as low switching loss. They are designed for the applications such as hybrid and electric vehicle.
SiC power MOSFET
Low RDS(on)
Low inductance case avoid oscillations
ROHS
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