Starpower DOSEMI Single Switch-Channel SiC Mosfet without Diode, 37 A, 1200 V N, 4-Pin Tape & Reel DM800S12TDRB

N
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Subtotal (1 unit)*

SGD10.75

(exc. GST)

SGD11.72

(inc. GST)

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1 - 9SGD10.75
10 - 99SGD9.67
100 - 499SGD8.91
500 - 999SGD8.28
1000 +SGD6.73

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RS Stock No.:
427-759
Mfr. Part No.:
DM800S12TDRB
Manufacturer:
Starpower
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Brand

Starpower

Product Type

SiC Mosfet without Diode

Channel Type

Single Switch

Maximum Continuous Drain Current Id

37A

Maximum Drain Source Voltage Vds

1200V

Package Type

Tape & Reel

Series

DOSEMI

Mount Type

Through Hole

Pin Count

4

Maximum Drain Source Resistance Rds

105mΩ

Channel Mode

N

Typical Gate Charge Qg @ Vgs

36nC

Maximum Power Dissipation Pd

162W

Forward Voltage Vf

4.1V

Maximum Gate Source Voltage Vgs

22 V

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

175°C

Standards/Approvals

RoHS

Automotive Standard

No

COO (Country of Origin):
CN
The Starpower MOSFET Power Discrete provides ultralow conduction loss as well as low switching loss. They are designed for the applications such as hybrid and electric vehicle.

SiC power MOSFET

Low RDS(on)

Low inductance case avoid oscillations

ROHS

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