Starpower DOSEMI Single Switch-Channel SiC Mosfet without Diode, 37 A, 1.2 kV Enhancement, 4-Pin Tape & Reel
- RS Stock No.:
- 427-759
- Mfr. Part No.:
- DM800S12TDRB
- Manufacturer:
- Starpower
Bulk discount available
View bulk pricing optionsSubtotal (1 unit)*
SGD11.17
(exc. GST)
SGD12.18
(inc. GST)
FREE delivery for orders over $75.00, or create a business account to enjoy free delivery from just $28
In Stock
- 31 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit |
|---|---|
| 1 - 9 | SGD11.17 |
| 10 - 99 | SGD10.05 |
| 100 - 499 | SGD9.26 |
| 500 - 999 | SGD8.61 |
| 1000 + | SGD7.00 |
*price indicative
- RS Stock No.:
- 427-759
- Mfr. Part No.:
- DM800S12TDRB
- Manufacturer:
- Starpower
Specifications
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Starpower | |
| Product Type | SiC Mosfet without Diode | |
| Channel Type | Single Switch | |
| Maximum Continuous Drain Current Id | 37A | |
| Maximum Drain Source Voltage Vds | 1.2kV | |
| Package Type | Tape & Reel | |
| Series | DOSEMI | |
| Mount Type | Through Hole | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 105mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 22V | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 4.1V | |
| Maximum Power Dissipation Pd | 162W | |
| Typical Gate Charge Qg @ Vgs | 36nC | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Starpower | ||
Product Type SiC Mosfet without Diode | ||
Channel Type Single Switch | ||
Maximum Continuous Drain Current Id 37A | ||
Maximum Drain Source Voltage Vds 1.2kV | ||
Package Type Tape & Reel | ||
Series DOSEMI | ||
Mount Type Through Hole | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 105mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 22V | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 4.1V | ||
Maximum Power Dissipation Pd 162W | ||
Typical Gate Charge Qg @ Vgs 36nC | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
The Starpower MOSFET Power Discrete provides ultralow conduction loss as well as low switching loss. They are designed for the applications such as hybrid and electric vehicle.
SiC power MOSFET
Low RDS(on)
Low inductance case avoid oscillations
ROHS
Related links
- Starpower DOSEMI Single Switch-Channel SiC Mosfet without Diode 1.2 kV Enhancement, 4-Pin Tape & Reel
- Starpower DOSEMI Single Switch-Channel SiC Mosfet without Diode 1.2 kV Enhancement, 4-Pin Tape & Reel
- STMicroelectronics N-Channel MOSFET 1.2 kV Enhancement, 3-Pin Tape & Reel
- STMicroelectronics N-Channel MOSFET 1.2 kV Enhancement, 3-Pin Tape & Reel STH12N120K5-2AG
- STMicroelectronics SiC MOSFET N-Channel MOSFET 1.2 kV Enhancement, 3-Pin H2PAK-2 SCT20N120H
- Infineon IMZC120 N-Channel MOSFET 1.2 kV Enhancement, 4-Pin PG-TO-247-4-U07 IMZC120R053M2HXKSA1
- IXYS Linear N-Channel MOSFET 1 kV Enhancement, 4-Pin SOT-227 IXTN22N100L
- IXYS Linear N-Channel MOSFET 1 kV Enhancement, 4-Pin SOT-227