Infineon FP50R12W2T7BPSA1, Type N-Channel Common Emitter IGBT, 50 A 1200 V, 35-Pin EasyPIM, Panel
- RS Stock No.:
- 273-2925
- Mfr. Part No.:
- FP50R12W2T7BPSA1
- Manufacturer:
- Infineon
This image is representative of the product range
Bulk discount available
Subtotal (1 tray of 15 units)*
SGD1,035.09
(exc. GST)
SGD1,128.255
(inc. GST)
FREE delivery for orders over $150, or create a business account to enjoy free delivery from just $28
In Stock
- 30 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Tray* |
|---|---|---|
| 15 - 15 | SGD69.006 | SGD1,035.09 |
| 30 - 45 | SGD66.706 | SGD1,000.59 |
| 60 + | SGD62.259 | SGD933.89 |
*price indicative
- RS Stock No.:
- 273-2925
- Mfr. Part No.:
- FP50R12W2T7BPSA1
- Manufacturer:
- Infineon
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | IGBT | |
| Maximum Continuous Collector Current Ic | 50A | |
| Maximum Collector Emitter Voltage Vceo | 1200V | |
| Maximum Power Dissipation Pd | 20mW | |
| Number of Transistors | 6 | |
| Package Type | EasyPIM | |
| Configuration | Common Emitter | |
| Mount Type | Panel | |
| Channel Type | Type N | |
| Pin Count | 35 | |
| Minimum Operating Temperature | -40°C | |
| Maximum Gate Emitter Voltage VGEO | 20 V | |
| Maximum Collector Emitter Saturation Voltage VceSAT | 1.5V | |
| Maximum Operating Temperature | 175°C | |
| Length | 107.5mm | |
| Width | 45 mm | |
| Height | 15.5mm | |
| Standards/Approvals | RoHS, IEC 60747 | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type IGBT | ||
Maximum Continuous Collector Current Ic 50A | ||
Maximum Collector Emitter Voltage Vceo 1200V | ||
Maximum Power Dissipation Pd 20mW | ||
Number of Transistors 6 | ||
Package Type EasyPIM | ||
Configuration Common Emitter | ||
Mount Type Panel | ||
Channel Type Type N | ||
Pin Count 35 | ||
Minimum Operating Temperature -40°C | ||
Maximum Gate Emitter Voltage VGEO 20 V | ||
Maximum Collector Emitter Saturation Voltage VceSAT 1.5V | ||
Maximum Operating Temperature 175°C | ||
Length 107.5mm | ||
Width 45 mm | ||
Height 15.5mm | ||
Standards/Approvals RoHS, IEC 60747 | ||
Automotive Standard No | ||
The Infineon three phase input rectifier PIM (power integrated modules) IGBT module with TRENCHSTOP IGBT7, emitter controlled 7 diode and NTC.
Overload operation up to 175°C
High power density
Compact design
Related links
- Infineon 50 A 1200 V Panel
- Infineon FS50R12W1T7B11BOMA1 50 A 1200 V Module, Panel
- Infineon 50 A 1200 V Module, Panel
- onsemi FGY4L160T120SWD 160 A 1200 V Through Hole
- onsemi FGY4L75T120SWD 75 A 1200 V Through Hole
- onsemi FGY4L100T120SWD 200 A 1200 V Through Hole
- Infineon 70 A 1200 V Panel
- Infineon TDB6HK124N16RRBPSA1 70 A 1200 V Panel
