onsemi FGY4L75T120SWD, Type N-Channel Common Emitter IGBT, 75 A 1200 V, 4-Pin TO-247-4L, Through Hole
- RS Stock No.:
- 277-080
- Mfr. Part No.:
- FGY4L75T120SWD
- Manufacturer:
- onsemi
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Subtotal (1 unit)*
SGD14.92
(exc. GST)
SGD16.26
(inc. GST)
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In Stock
- Plus 30 unit(s) shipping from 16 February 2026
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Units | Per unit |
|---|---|
| 1 - 9 | SGD14.92 |
| 10 - 99 | SGD13.44 |
| 100 - 499 | SGD12.38 |
| 500 - 999 | SGD11.49 |
| 1000 + | SGD10.29 |
*price indicative
- RS Stock No.:
- 277-080
- Mfr. Part No.:
- FGY4L75T120SWD
- Manufacturer:
- onsemi
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Maximum Continuous Collector Current Ic | 75A | |
| Product Type | IGBT | |
| Maximum Collector Emitter Voltage Vceo | 1200V | |
| Number of Transistors | 1 | |
| Maximum Power Dissipation Pd | 652W | |
| Package Type | TO-247-4L | |
| Configuration | Common Emitter | |
| Mount Type | Through Hole | |
| Channel Type | Type N | |
| Pin Count | 4 | |
| Maximum Collector Emitter Saturation Voltage VceSAT | 2V | |
| Maximum Gate Emitter Voltage VGEO | 20 V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 175°C | |
| Width | 5 mm | |
| Standards/Approvals | RoHS | |
| Length | 15.8mm | |
| Height | 22.54mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand onsemi | ||
Maximum Continuous Collector Current Ic 75A | ||
Product Type IGBT | ||
Maximum Collector Emitter Voltage Vceo 1200V | ||
Number of Transistors 1 | ||
Maximum Power Dissipation Pd 652W | ||
Package Type TO-247-4L | ||
Configuration Common Emitter | ||
Mount Type Through Hole | ||
Channel Type Type N | ||
Pin Count 4 | ||
Maximum Collector Emitter Saturation Voltage VceSAT 2V | ||
Maximum Gate Emitter Voltage VGEO 20 V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 175°C | ||
Width 5 mm | ||
Standards/Approvals RoHS | ||
Length 15.8mm | ||
Height 22.54mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
The ON Semiconductor IGBT and Gen7 Diode in a TO247 4-lead package offer optimal performance with low switching and conduction losses, enabling high-efficiency operations. These components are designed for use in various applications such as solar inverters, uninterruptible power supplies (UPS), and energy storage systems (ESS), providing reliable and efficient power management in these demanding environments.
High current capability
Smooth and optimized switching
Low switching loss
RoHS compliant
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