onsemi FGY4L140T120SWD, Type N-Channel Common Emitter IGBT, 140 A 1200 V, 4-Pin TO-247-4L, Through Hole
- RS Stock No.:
- 277-078
- Mfr. Part No.:
- FGY4L140T120SWD
- Manufacturer:
- onsemi
This image is representative of the product range
Bulk discount available
Subtotal (1 unit)*
SGD22.96
(exc. GST)
SGD25.03
(inc. GST)
FREE delivery for orders over $150, or create a business account to enjoy free delivery from just $28
In Stock
- Plus 10 unit(s) shipping from 16 February 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit |
|---|---|
| 1 - 9 | SGD22.96 |
| 10 - 99 | SGD20.66 |
| 100 + | SGD19.05 |
*price indicative
- RS Stock No.:
- 277-078
- Mfr. Part No.:
- FGY4L140T120SWD
- Manufacturer:
- onsemi
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Maximum Continuous Collector Current Ic | 140A | |
| Product Type | IGBT | |
| Maximum Collector Emitter Voltage Vceo | 1200V | |
| Number of Transistors | 1 | |
| Maximum Power Dissipation Pd | 1.25kW | |
| Package Type | TO-247-4L | |
| Configuration | Common Emitter | |
| Mount Type | Through Hole | |
| Channel Type | Type N | |
| Pin Count | 4 | |
| Maximum Gate Emitter Voltage VGEO | 20 V | |
| Maximum Collector Emitter Saturation Voltage VceSAT | 2V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 175°C | |
| Width | 15.8 mm | |
| Length | 22.54mm | |
| Height | 5mm | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand onsemi | ||
Maximum Continuous Collector Current Ic 140A | ||
Product Type IGBT | ||
Maximum Collector Emitter Voltage Vceo 1200V | ||
Number of Transistors 1 | ||
Maximum Power Dissipation Pd 1.25kW | ||
Package Type TO-247-4L | ||
Configuration Common Emitter | ||
Mount Type Through Hole | ||
Channel Type Type N | ||
Pin Count 4 | ||
Maximum Gate Emitter Voltage VGEO 20 V | ||
Maximum Collector Emitter Saturation Voltage VceSAT 2V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 175°C | ||
Width 15.8 mm | ||
Length 22.54mm | ||
Height 5mm | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
The ON Semiconductor IGBT and Gen7 Diode in a TO247 4-lead package offer optimal performance with low switching and conduction losses, enabling high-efficiency operations. These components are designed for use in various applications such as solar inverters, uninterruptible power supplies (UPS), and energy storage systems (ESS), providing reliable and efficient power management in these demanding environments.
High current capability
Smooth and optimized switching
Low switching loss
RoHS compliant
Related links
- onsemi FGY4L100T120SWD Common Emitter IGBT 4-Pin TO-247-4L, Through Hole
- onsemi FGY4L160T120SWD Common Emitter IGBT 4-Pin TO-247-4L, Through Hole
- onsemi FGY4L75T120SWD Common Emitter IGBT 4-Pin TO-247-4L, Through Hole
- Infineon IKQ140N120CH7XKSA1 Common Emitter IGBT 3-Pin TO-247, Through Hole
- ROHM RGA80TRX2EHRC15 IGBT 4-Pin TO-247-4L, Through Hole
- ROHM RGA80TRX2HRC15 IGBT 4-Pin TO-247-4L, Through Hole
- Infineon IKQ100N120CH7XKSA1 Common Emitter IGBT 3-Pin TO-247, Through Hole
- Infineon FF450R12ME4EB11BPSA1 Common Emitter IGBT Module 13-Pin ECONODUAL
