onsemi FGY4L160T120SWD, Type N-Channel Common Emitter IGBT, 160 A 1200 V, 4-Pin TO-247-4L, Through Hole

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Packaging Options:
RS Stock No.:
277-079
Mfr. Part No.:
FGY4L160T120SWD
Manufacturer:
onsemi
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Brand

onsemi

Product Type

IGBT

Maximum Continuous Collector Current Ic

160A

Maximum Collector Emitter Voltage Vceo

1200V

Maximum Power Dissipation Pd

1.5kW

Number of Transistors

1

Package Type

TO-247-4L

Configuration

Common Emitter

Mount Type

Through Hole

Channel Type

Type N

Pin Count

4

Maximum Collector Emitter Saturation Voltage VceSAT

2V

Maximum Gate Emitter Voltage VGEO

20 V

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

175°C

Length

15.8mm

Width

5 mm

Standards/Approvals

RoHS

Height

22.54mm

Automotive Standard

No

COO (Country of Origin):
CN
The ON Semiconductor IGBT and Gen7 Diode in a TO247 4-lead package offer optimal performance with low switching and conduction losses, enabling high-efficiency operations. These components are designed for use in various applications such as solar inverters, uninterruptible power supplies (UPS), and energy storage systems (ESS), providing reliable and efficient power management in these demanding environments.

High current capability

Smooth and optimized switching

Low switching loss

RoHS compliant

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