onsemi FGY4L100T120SWD, Type N-Channel Common Emitter IGBT, 200 A 1200 V, 4-Pin TO-247-4L, Through Hole
- RS Stock No.:
- 277-076
- Mfr. Part No.:
- FGY4L100T120SWD
- Manufacturer:
- onsemi
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Subtotal (1 unit)*
SGD17.55
(exc. GST)
SGD19.13
(inc. GST)
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Units | Per unit |
|---|---|
| 1 - 9 | SGD17.55 |
| 10 - 99 | SGD15.79 |
| 100 - 499 | SGD14.57 |
| 500 - 999 | SGD13.51 |
| 1000 + | SGD12.10 |
*price indicative
- RS Stock No.:
- 277-076
- Mfr. Part No.:
- FGY4L100T120SWD
- Manufacturer:
- onsemi
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Product Type | IGBT | |
| Maximum Continuous Collector Current Ic | 200A | |
| Maximum Collector Emitter Voltage Vceo | 1200V | |
| Maximum Power Dissipation Pd | 1.07kW | |
| Number of Transistors | 1 | |
| Package Type | TO-247-4L | |
| Configuration | Common Emitter | |
| Mount Type | Through Hole | |
| Channel Type | Type N | |
| Pin Count | 4 | |
| Maximum Collector Emitter Saturation Voltage VceSAT | 2V | |
| Maximum Gate Emitter Voltage VGEO | 20 V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 175°C | |
| Height | 22.54mm | |
| Width | 5 mm | |
| Length | 15.8mm | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand onsemi | ||
Product Type IGBT | ||
Maximum Continuous Collector Current Ic 200A | ||
Maximum Collector Emitter Voltage Vceo 1200V | ||
Maximum Power Dissipation Pd 1.07kW | ||
Number of Transistors 1 | ||
Package Type TO-247-4L | ||
Configuration Common Emitter | ||
Mount Type Through Hole | ||
Channel Type Type N | ||
Pin Count 4 | ||
Maximum Collector Emitter Saturation Voltage VceSAT 2V | ||
Maximum Gate Emitter Voltage VGEO 20 V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 175°C | ||
Height 22.54mm | ||
Width 5 mm | ||
Length 15.8mm | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
The ON Semiconductor IGBT and Gen7 Diode in a TO247 4-lead package offer optimal performance with low switching and conduction losses, enabling high-efficiency operations. These components are designed for use in various applications such as solar inverters, uninterruptible power supplies (UPS), and energy storage systems (ESS), providing reliable and efficient power management in these demanding environments.
High current capability
Smooth and optimized switching
Low switching loss
RoHS compliant
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