Infineon FS50R12W1T7B11BOMA1, Type N-Channel Common Emitter IGBT, 50 A 1200 V Module, Panel

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Subtotal (1 tray of 24 units)*

SGD1,151.88

(exc. GST)

SGD1,255.56

(inc. GST)

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Units
Per unit
Per Tray*
24 - 24SGD47.995SGD1,151.88
48 - 72SGD46.395SGD1,113.48
96 +SGD43.302SGD1,039.25

*price indicative

RS Stock No.:
273-2931
Mfr. Part No.:
FS50R12W1T7B11BOMA1
Manufacturer:
Infineon
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Brand

Infineon

Maximum Continuous Collector Current Ic

50A

Product Type

IGBT

Maximum Collector Emitter Voltage Vceo

1200V

Maximum Power Dissipation Pd

20mW

Number of Transistors

6

Package Type

Module

Configuration

Common Emitter

Mount Type

Panel

Channel Type

Type N

Maximum Gate Emitter Voltage VGEO

20 V

Minimum Operating Temperature

-40°C

Maximum Collector Emitter Saturation Voltage VceSAT

1.64V

Maximum Operating Temperature

125°C

Standards/Approvals

EN61140, IEC61140

Height

16.4mm

Width

33.8 mm

Length

62.8mm

Automotive Standard

No

The Infineon IGBT module with TRENCHSTOP IGBT7, emitter controlled 7 diode, NTC and pressFIT contact technology.

High power density

Compact design

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