Infineon F475R06W1E3BOMA1 IGBT Module 1200 V
- RS Stock No.:
- 244-5370
- Mfr. Part No.:
- F475R06W1E3BOMA1
- Manufacturer:
- Infineon
This image is representative of the product range
Bulk discount available
Subtotal (1 unit)*
SGD47.15
(exc. GST)
SGD51.39
(inc. GST)
Stock information currently inaccessible - Please check back later
Units | Per unit |
|---|---|
| 1 - 1 | SGD47.15 |
| 2 - 2 | SGD46.21 |
| 3 - 3 | SGD45.29 |
| 4 - 4 | SGD44.38 |
| 5 + | SGD43.50 |
*price indicative
- RS Stock No.:
- 244-5370
- Mfr. Part No.:
- F475R06W1E3BOMA1
- Manufacturer:
- Infineon
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | IGBT Module | |
| Maximum Collector Emitter Voltage Vceo | 1200V | |
| Number of Transistors | 4 | |
| Maximum Power Dissipation Pd | 275W | |
| Maximum Gate Emitter Voltage VGEO | 20 V | |
| Minimum Operating Temperature | -40°C | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type IGBT Module | ||
Maximum Collector Emitter Voltage Vceo 1200V | ||
Number of Transistors 4 | ||
Maximum Power Dissipation Pd 275W | ||
Maximum Gate Emitter Voltage VGEO 20 V | ||
Minimum Operating Temperature -40°C | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Automotive Standard No | ||
The infineon IGBT module is suitable for auxiliary inverters, UPS systems, inductive heating and welding and solar applications etc.
Electrical features
Low switching losses, low inductive design
Trench IGBT 3
VCEsat with positive temperature coefficient
Low VCEsat
Mechanical features
Al2O3 substrate with low thermal resistance
Compact design
Solder contact technology
Rugged mounting due to integrated mounting clamps
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