Infineon FP25R12W2T4B11BOMA1 IGBT Module, 39 A 1200 V
- RS Stock No.:
- 244-5391
- Mfr. Part No.:
- FP25R12W2T4B11BOMA1
- Manufacturer:
- Infineon
Bulk discount available
Subtotal (1 unit)*
SGD57.80
(exc. GST)
SGD63.00
(inc. GST)
FREE delivery for orders over $150, or create a business account to enjoy free delivery from just $28
In Stock
- 11 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit |
|---|---|
| 1 - 1 | SGD57.80 |
| 2 - 2 | SGD56.64 |
| 3 - 3 | SGD55.51 |
| 4 - 4 | SGD54.40 |
| 5 + | SGD53.31 |
*price indicative
- RS Stock No.:
- 244-5391
- Mfr. Part No.:
- FP25R12W2T4B11BOMA1
- Manufacturer:
- Infineon
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Maximum Continuous Collector Current | 39 A | |
| Maximum Collector Emitter Voltage | 1200 V | |
| Maximum Gate Emitter Voltage | +/-20V | |
| Number of Transistors | 7 | |
| Maximum Power Dissipation | 175 W | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Maximum Continuous Collector Current 39 A | ||
Maximum Collector Emitter Voltage 1200 V | ||
Maximum Gate Emitter Voltage +/-20V | ||
Number of Transistors 7 | ||
Maximum Power Dissipation 175 W | ||
The infineon IGBT module the maximum rated repetitive peak collector current is 50 A and maximum collector-emitter saturation voltag 2.25 V, gate threshold voltage is 6.4 V.
Collector-emitter cut-off current 1.0 mA
Temperature under switching conditions 150° C
Gate-emitter leakage current 400 nA
Reverse transfer capacitance 0.05 nF
Temperature under switching conditions 150° C
Gate-emitter leakage current 400 nA
Reverse transfer capacitance 0.05 nF
For these non-cancellable (NC), and non-returnable (NR) products, Terms and Conditions apply.
Related links
- Infineon FP25R12W2T4B11BOMA1 IGBT Module, 39 A 1200 V
- Infineon FP25R12W2T4BOMA1 IGBT Module, 39 A 1200 V
- Semikron Danfoss SEMITOP SiC Power Module 1200 V SEMITOP 3 SK45MAHT12SCp
- Infineon FP10R12W1T7B11BOMA1 IGBT Module, 10 A 1200 V EASY1B
- Infineon FS100R12W2T7B11BOMA1 IGBT Module, 100 A 1200 V Module
- Infineon FF450R07ME4B11BPSA1 IGBT Module Panel Mount
- Infineon FP75R12KT4PBPSA1 IGBT Module, 75 A 1200 V EASY2B
- Infineon FP50R12KT4PBPSA1 IGBT Module, 50 A 1200 V EASY2B