Infineon FP75R12KT4B11BOSA1 IGBT Module, 75 A 1200 V

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Subtotal (1 unit)*

SGD195.05

(exc. GST)

SGD212.60

(inc. GST)

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Units
Per unit
1 - 1SGD195.05
2 - 2SGD191.15
3 - 3SGD187.33
4 - 4SGD183.59
5 +SGD179.92

*price indicative

Packaging Options:
RS Stock No.:
244-5848
Mfr. Part No.:
FP75R12KT4B11BOSA1
Manufacturer:
Infineon
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Brand

Infineon

Maximum Continuous Collector Current

75 A

Maximum Collector Emitter Voltage

1200 V

Maximum Gate Emitter Voltage

±20V

Number of Transistors

7

Maximum Power Dissipation

385 W

The infineon IGBT module is suitable for auxiliary inverters, motor drives, servo drives etc.

Electrical Features
Low switching losses
Tvj op = 150° C
VCEsat with positive temperature coefficient
Low VCEsat
Mechanical features
High power and thermal cycling capability
Integrated NTC temperature sensor
Copper base plate
Pressfit contact technology
Standard housing

For these non-cancellable (NC), and non-returnable (NR) products, Terms and Conditions apply.


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