Infineon FP75R12KT4B11BOSA1 IGBT Module 1200 V

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Subtotal (1 unit)*

SGD195.05

(exc. GST)

SGD212.60

(inc. GST)

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Units
Per unit
1 - 1SGD195.05
2 - 2SGD191.15
3 - 3SGD187.33
4 - 4SGD183.59
5 +SGD179.92

*price indicative

Packaging Options:
RS Stock No.:
244-5848
Mfr. Part No.:
FP75R12KT4B11BOSA1
Manufacturer:
Infineon
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Brand

Infineon

Product Type

IGBT Module

Maximum Collector Emitter Voltage Vceo

1200V

Maximum Power Dissipation Pd

385W

Number of Transistors

7

Maximum Collector Emitter Saturation Voltage VceSAT

2.15V

Maximum Gate Emitter Voltage VGEO

20 V

Minimum Operating Temperature

-40°C

Maximum Operating Temperature

150°C

Height

17mm

Length

122mm

Width

62 mm

Standards/Approvals

RoHS

Series

FP75R12KT4B11B

Automotive Standard

No

The infineon IGBT module is suitable for auxiliary inverters, motor drives, servo drives etc.

Electrical Features

Low switching losses

Tvj op = 150° C

VCEsat with positive temperature coefficient

Low VCEsat

Mechanical features

High power and thermal cycling capability

Integrated NTC temperature sensor

Copper base plate

Pressfit contact technology

Standard housing

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