Infineon FP100R12KT4B11BOSA1 IGBT Module 1200 V

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Subtotal (1 unit)*

SGD184.08

(exc. GST)

SGD200.65

(inc. GST)

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Units
Per unit
1 - 1SGD184.08
2 - 2SGD180.39
3 - 3SGD176.79
4 - 4SGD173.25
5 +SGD169.78

*price indicative

Packaging Options:
RS Stock No.:
244-5377
Mfr. Part No.:
FP100R12KT4B11BOSA1
Manufacturer:
Infineon
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Brand

Infineon

Product Type

IGBT Module

Maximum Collector Emitter Voltage Vceo

1200V

Number of Transistors

7

Maximum Power Dissipation Pd

515W

Maximum Gate Emitter Voltage VGEO

20 V

Maximum Collector Emitter Saturation Voltage VceSAT

2.1V

Minimum Operating Temperature

-40°C

Maximum Operating Temperature

150°C

Width

62 mm

Length

122mm

Height

17mm

Series

FP100R12KT4B11

Standards/Approvals

RoHS

Automotive Standard

No

The infineon IGBT module is suitable for auxiliary inverters, motor drives and servo drives etc.

Electrical features

Low switching losses

Tvj op = 150° C

VCEsat with positive temperature coefficient

Low VCEsat

Mechanical features

High power and thermal cycling capability

Integrated NTC temperature sensor

Copper base plate

Pressfit contact technology

Standard housing

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