Infineon IGBT Module 1200 V

This image is representative of the product range

Bulk discount available

Subtotal (1 tray of 24 units)*

SGD942.072

(exc. GST)

SGD1,026.864

(inc. GST)

Add to Basket
Select or type quantity
Temporarily out of stock
  • Shipping from 16 June 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units
Per unit
Per Tray*
24 - 24SGD39.253SGD942.07
48 - 48SGD38.468SGD923.23
72 +SGD37.699SGD904.78

*price indicative

RS Stock No.:
244-5369
Mfr. Part No.:
F475R06W1E3BOMA1
Manufacturer:
Infineon
Find similar products by selecting one or more attributes.
Select all

Brand

Infineon

Product Type

IGBT Module

Maximum Collector Emitter Voltage Vceo

1200V

Number of Transistors

4

Maximum Power Dissipation Pd

275W

Minimum Operating Temperature

-40°C

Maximum Gate Emitter Voltage VGEO

20 V

Maximum Operating Temperature

150°C

Standards/Approvals

No

Automotive Standard

No

The infineon IGBT module is suitable for auxiliary inverters, UPS systems, inductive heating and welding and solar applications etc.

Electrical features

Low switching losses, low inductive design

Trench IGBT 3

VCEsat with positive temperature coefficient

Low VCEsat

Mechanical features

Al2O3 substrate with low thermal resistance

Compact design

Solder contact technology

Rugged mounting due to integrated mounting clamps

Related links