Infineon IGBT Module 1200 V
- RS Stock No.:
- 244-5392
- Mfr. Part No.:
- FP25R12W2T4BOMA1
- Manufacturer:
- Infineon
This image is representative of the product range
Bulk discount available
Subtotal (1 tray of 15 units)*
SGD911.79
(exc. GST)
SGD993.855
(inc. GST)
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- Shipping from 23 June 2026
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Units | Per unit | Per Tray* |
|---|---|---|
| 15 - 15 | SGD60.786 | SGD911.79 |
| 30 - 30 | SGD59.569 | SGD893.54 |
| 45 + | SGD58.379 | SGD875.69 |
*price indicative
- RS Stock No.:
- 244-5392
- Mfr. Part No.:
- FP25R12W2T4BOMA1
- Manufacturer:
- Infineon
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | IGBT Module | |
| Maximum Collector Emitter Voltage Vceo | 1200V | |
| Number of Transistors | 7 | |
| Maximum Power Dissipation Pd | 175W | |
| Minimum Operating Temperature | -40°C | |
| Maximum Gate Emitter Voltage VGEO | 20 V | |
| Maximum Collector Emitter Saturation Voltage VceSAT | 2.25V | |
| Maximum Operating Temperature | 150°C | |
| Width | 42.5 mm | |
| Standards/Approvals | RoHS | |
| Height | 12mm | |
| Length | 51mm | |
| Series | FP25R12W2T4B | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type IGBT Module | ||
Maximum Collector Emitter Voltage Vceo 1200V | ||
Number of Transistors 7 | ||
Maximum Power Dissipation Pd 175W | ||
Minimum Operating Temperature -40°C | ||
Maximum Gate Emitter Voltage VGEO 20 V | ||
Maximum Collector Emitter Saturation Voltage VceSAT 2.25V | ||
Maximum Operating Temperature 150°C | ||
Width 42.5 mm | ||
Standards/Approvals RoHS | ||
Height 12mm | ||
Length 51mm | ||
Series FP25R12W2T4B | ||
Automotive Standard No | ||
The infineon IGBT module the maximum rated repetitive peak collector current is 50 A and maximum collector-emitter saturation voltag 2.25 V, gate threshold voltage is 6.4 V.
Collector-emitter cut-off current 1.0 mA
Temperature under switching conditions 150° C
Gate-emitter leakage current 400 nA
Reverse transfer capacitance 0.05 nF
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