Infineon IGBT Module, 200 A 1200 V EconoPACKTM3
- RS Stock No.:
- 244-5404P
- Mfr. Part No.:
- FS150R12KT3BOSA1
- Manufacturer:
- Infineon
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Bulk discount available
Subtotal 2 units (supplied in a tray)*
SGD306.20
(exc. GST)
SGD333.76
(inc. GST)
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Temporarily out of stock
- 10 unit(s) shipping from 18 June 2026
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Units | Per unit |
|---|---|
| 2 - 2 | SGD153.10 |
| 3 - 3 | SGD150.04 |
| 4 - 4 | SGD147.04 |
| 5 + | SGD144.10 |
*price indicative
- RS Stock No.:
- 244-5404P
- Mfr. Part No.:
- FS150R12KT3BOSA1
- Manufacturer:
- Infineon
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Maximum Continuous Collector Current Ic | 200A | |
| Product Type | IGBT Module | |
| Maximum Collector Emitter Voltage Vceo | 1200V | |
| Maximum Power Dissipation Pd | 700W | |
| Number of Transistors | 6 | |
| Package Type | EconoPACKTM3 | |
| Minimum Operating Temperature | -40°C | |
| Maximum Collector Emitter Saturation Voltage VceSAT | 2.15V | |
| Maximum Gate Emitter Voltage VGEO | 20 V | |
| Maximum Operating Temperature | 125°C | |
| Standards/Approvals | No | |
| Series | FS150R12KT3 | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Maximum Continuous Collector Current Ic 200A | ||
Product Type IGBT Module | ||
Maximum Collector Emitter Voltage Vceo 1200V | ||
Maximum Power Dissipation Pd 700W | ||
Number of Transistors 6 | ||
Package Type EconoPACKTM3 | ||
Minimum Operating Temperature -40°C | ||
Maximum Collector Emitter Saturation Voltage VceSAT 2.15V | ||
Maximum Gate Emitter Voltage VGEO 20 V | ||
Maximum Operating Temperature 125°C | ||
Standards/Approvals No | ||
Series FS150R12KT3 | ||
Automotive Standard No | ||
The infineon IGBT module the maximum rated repetitive peak collector current is 300 A and collector-emitter saturation voltag 2.15 V, gate threshold voltage is 6.5 V.
Collector-emitter cut-off current 5.0 mA
Temperature under switching conditions 125° C
Gate-emitter leakage current 400 nA
Reverse transfer capacitance 0.40 nF
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