Infineon FS150R12KT3BOSA1 IGBT Module, 200 A 1200 V

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SGD194.46

(exc. GST)

SGD211.96

(inc. GST)

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1 - 1SGD194.46
2 - 2SGD190.57
3 - 3SGD186.76
4 - 4SGD183.03
5 +SGD179.37

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Packaging Options:
RS Stock No.:
244-5404
Mfr. Part No.:
FS150R12KT3BOSA1
Manufacturer:
Infineon
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Brand

Infineon

Maximum Continuous Collector Current

200 A

Maximum Collector Emitter Voltage

1200 V

Maximum Gate Emitter Voltage

+/-20V

Number of Transistors

6

Maximum Power Dissipation

700 W

The infineon IGBT module the maximum rated repetitive peak collector current is 300 A and collector-emitter saturation voltag 2.15 V, gate threshold voltage is 6.5 V.

Collector-emitter cut-off current 5.0 mA
Temperature under switching conditions 125° C
Gate-emitter leakage current 400 nA
Reverse transfer capacitance 0.40 nF

For these non-cancellable (NC), and non-returnable (NR) products, Terms and Conditions apply.


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