Infineon IGBT Module, 150 A 1200 V
- RS Stock No.:
- 244-5407
- Mfr. Part No.:
- FS150R12KT4B11BOSA1
- Manufacturer:
- Infineon
This image is representative of the product range
Bulk discount available
Subtotal (1 tray of 10 units)*
SGD2,137.97
(exc. GST)
SGD2,330.39
(inc. GST)
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Temporarily out of stock
- 10 unit(s) shipping from 19 March 2026
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Units | Per unit | Per Tray* |
|---|---|---|
| 10 - 10 | SGD213.797 | SGD2,137.97 |
| 20 - 20 | SGD209.522 | SGD2,095.22 |
| 30 + | SGD205.33 | SGD2,053.30 |
*price indicative
- RS Stock No.:
- 244-5407
- Mfr. Part No.:
- FS150R12KT4B11BOSA1
- Manufacturer:
- Infineon
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | IGBT Module | |
| Maximum Continuous Collector Current Ic | 150A | |
| Maximum Collector Emitter Voltage Vceo | 1200V | |
| Maximum Power Dissipation Pd | 750W | |
| Number of Transistors | 6 | |
| Maximum Gate Emitter Voltage VGEO | 20 V | |
| Maximum Collector Emitter Saturation Voltage VceSAT | 2.1V | |
| Minimum Operating Temperature | -40°C | |
| Maximum Operating Temperature | 175°C | |
| Series | FS | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type IGBT Module | ||
Maximum Continuous Collector Current Ic 150A | ||
Maximum Collector Emitter Voltage Vceo 1200V | ||
Maximum Power Dissipation Pd 750W | ||
Number of Transistors 6 | ||
Maximum Gate Emitter Voltage VGEO 20 V | ||
Maximum Collector Emitter Saturation Voltage VceSAT 2.1V | ||
Minimum Operating Temperature -40°C | ||
Maximum Operating Temperature 175°C | ||
Series FS | ||
Standards/Approvals No | ||
Automotive Standard No | ||
The infineon IGBT module the maximum rated repetitive peak collector current is 300 A and collector-emitter saturation voltag 2.10 V, gate threshold voltage is 6.4 V.
Collector-emitter cut-off current 1.0 mA
Temperature under switching conditions 150° C
Gate-emitter leakage current 100 nA
Reverse transfer capacitance 0.35 nF
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