MOSFETs

MOSFETs, also known as MOSFET transistors, stands for ’Metal Oxide Semiconductor Field-Effect Transistors’. MOSFETs are transistor devices which are controlled by a capacitor. The "Field-Effect" means that they are controlled by voltage. The aim of a MOSFET is to control the flow of the current passing through from the source to the drain terminals. It acts very similarly to a switch and is used for switching or amplifying electronic signals.

These semiconductor devices are ICs (integrated circuits) which are mounted onto PCBs. MOSFETs come in a range of standard package types such as DPAK, D2PAK, DFN, I2PAK, SOIC, SOT-223 and TO-220. For more information about MOSFETs, please see our complete guide to MOSFETs.

What are depletion and enhancement modes?

MOSFET transistors have two modes; depletion and enhancement. Depletion MOSFETs work like a closed switch. The current passes through when no current is applied. The current flow will stop if a negative voltage is applied. Enhancement mode MOSFETs are like a variable resistor and are generally more popular than the depletion mode MOSFETs. They come in n-channel or p-channel variants.

How do MOSFETs work?

The pins on a MOSFET package are the Source, Gate and Drain. When a voltage is applied between the Gate and the Source terminals, current can pass through from the Drain to the Source pins. When the voltage applied to the Gate changes, the resistance from the Drain to the Source will change too. The lower the voltage applied, the higher the resistance. As the voltage increases, the resistance from the Drain to Source will decrease. Power MOSFETs are like standard MOSFETs but they are designed to handle a higher level of power.

N-Channel vs. P-Channel MOSFETs

N-Channel MOSFETs contain additional electrons which are free to move around. They are a more popular channel type. N-Channel MOSFETs work when a positive charge is applied to the gate terminal.

P-Channel MOSFETS substrate contains electrons and electron holes. P-Channel MOSFETs are connected to a positive voltage. These MOSFETs turn on when the voltage supplied to the Gate terminal is lower than the Source voltage.


...
Read more Read less

Filters

Viewing 81 - 100 of 10934 products
Results per page
Description Price Channel Type Maximum Continuous Drain Current Maximum Drain Source Voltage Maximum Drain Source Resistance Package Type Mounting Type Pin Count Maximum Gate Source Voltage Channel Mode Maximum Gate Threshold Voltage Minimum Gate Threshold Voltage Maximum Power Dissipation Transistor Configuration Number of Elements per Chip
RS Stock No. 818-1450
Mfr. Part No.SIA429DJT-T1-GE3
BrandVishay
SGD0.711
Each (In a Pack of 20)
units
P 8.5 A 20 V 60 mΩ PowerPAK SC-70 Surface Mount 6 -8 V, +8 V Enhancement - 0.4V 19 W Single 1
RS Stock No. 690-0136
Mfr. Part No.BSS138LT3G
SGD0.204
Each (In a Pack of 25)
units
N 200 mA 50 V 3.5 Ω SOT-23 Surface Mount 3 -20 V, +20 V Enhancement 1.5V 0.5V 225 mW Single 1
RS Stock No. 542-9311
Mfr. Part No.IRF644SPBF
BrandVishay
SGD4.15
Each
units
N 14 A 250 V 280 mΩ D2PAK (TO-263) Surface Mount 3 -20 V, +20 V Enhancement - 2V 3.1 W Single 1
RS Stock No. 711-5382
Mfr. Part No.IXFK27N80Q
BrandIXYS
SGD35.97
Each
units
N 27 A 800 V 320 mΩ TO-264AA Through Hole 3 -20 V, +20 V Enhancement 4.5V - 500 W Single 1
RS Stock No. 826-8829
Mfr. Part No.IRF7105TRPBF
BrandInfineon
SGD0.76
Each (In a Pack of 20)
units
N, P 2.3 A, 3.5 A 25 V 160 mΩ, 400 mΩ SOIC Surface Mount 8 -20 V, +20 V Enhancement 3V 1V 2 W Isolated 2
RS Stock No. 165-6877
Mfr. Part No.IPG20N04S412ATMA1
BrandInfineon
SGD0.785
Each (On a Reel of 5000)
units
N 20 A 40 V 12.2 mΩ TDSON Surface Mount 8 -20 V, +20 V Enhancement 4V 2V 41 W Isolated 2
RS Stock No. 171-1917
Mfr. Part No.IPD25CN10NGATMA1
BrandInfineon
SGD1.52
Each (In a Pack of 10)
units
- - - - - - - - - - - - - -
RS Stock No. 865-1230
Mfr. Part No.FCA20N60F
SGD7.42
Each
units
N 20 A 600 V 190 mΩ TO-3PN Through Hole 3 -30 V, +30 V Enhancement - 3V 208 W Single 1
RS Stock No. 178-0830
Mfr. Part No.IRF644SPBF
BrandVishay
SGD3.46
Each (In a Tube of 50)
units
N 14 A 250 V 280 mΩ D2PAK (TO-263) Surface Mount 3 -20 V, +20 V Enhancement - 2V 3.1 W Single 1
RS Stock No. 165-6298
Mfr. Part No.SIA429DJT-T1-GE3
BrandVishay
SGD0.323
Each (On a Reel of 3000)
units
P 8.5 A 20 V 60 mΩ PowerPAK SC-70 Surface Mount 6 -8 V, +8 V Enhancement - 0.4V 19 W Single 1
RS Stock No. 663-9720
Mfr. Part No.2SK1067-4-TL-E
BrandSanyo
SGD0.38
Each (In a Pack of 5)
units
N 30 mA 16 V - MCP Surface Mount 3 -5 V, +5 V - - - 150 mW - 1
RS Stock No. 178-4687
Mfr. Part No.BSS138LT3G
SGD0.055
Each (On a Reel of 10000)
units
- - - - - - - - - - - - - -
RS Stock No. 650-4716
Mfr. Part No.IRFB3077PBF
BrandInfineon
SGD5.09
Each
units
N 210 A 75 V 3 mΩ TO-220AB Through Hole 3 -20 V, +20 V Enhancement 4V 2V 370 W Single 1
RS Stock No. 892-2217
Mfr. Part No.BSS84PH6327XTSA2
BrandInfineon
SGD0.161
Each (In a Pack of 250)
units
P 170 mA 60 V 12 Ω SOT-23 Surface Mount 3 -20 V, +20 V Enhancement 2V 1V 360 mW Single 1
RS Stock No. 751-3660
Mfr. Part No.BSS123W-7-F
SGD0.196
Each (In a Pack of 100)
units
N 170 mA 100 V 10 Ω SOT-323 (SC-70) Surface Mount 3 -20 V, +20 V Enhancement 2V - 200 mW Single 1
RS Stock No. 145-4465
Mfr. Part No.FCA20N60F
SGD5.891
Each (In a Tube of 30)
units
N 20 A 600 V 190 mΩ TO-3PN Through Hole 3 -30 V, +30 V Enhancement - 3V 208 W Single 1
RS Stock No. 103-2965
Mfr. Part No.BSS138LT1G
SGD0.071
Each (On a Reel of 3000)
units
N 200 mA 50 V 3.5 Ω SOT-23 Surface Mount 3 -20 V, +20 V Enhancement 1.5V - 225 mW Single 1
RS Stock No. 601-2122
Mfr. Part No.2SK3700(F)
BrandToshiba
SGD4.47
Each
units
N 5 A 900 V 2.5 Ω TO-3PN Through Hole 3 -30 V, +30 V Enhancement 4V - 150 W Single 1
RS Stock No. 124-9008
Mfr. Part No.IRFB5615PBF
BrandInfineon
SGD2.087
Each (In a Tube of 50)
units
N 35 A 150 V 39 mΩ TO-220AB Through Hole 3 -20 V, +20 V Enhancement 5V 3V 144 W Single 1
RS Stock No. 145-8903
Mfr. Part No.IPP50R380CEXKSA1
BrandInfineon
SGD1.397
Each (In a Tube of 50)
units
N 10.6 A 550 V 380 mΩ TO-220 Through Hole 3 -30 V, +30 V Enhancement 3.5V 2.5V 73 W Single 1