MOSFETs

pMOSFETs, also known as MOSFET transistors, stands for ’Metal Oxide Semiconductor Field-Effect Transistors’. MOSFETs are transistor devices which are controlled by a capacitor. The "Field-Effect" means that they are controlled by voltage. The aim of a MOSFET is to control the flow of the current passing through from the source to the drain terminals. It acts very similarly to a switch and is used for switching or amplifying electronic signals./p pThese semiconductor devices are ICs (integrated circuits) which are mounted onto PCBs. MOSFETs come in a range of standard package types such as DPAK, D2PAK, DFN, I2PAK, SOIC, SOT-223 and TO-220./p h2What are depletion and enhancement modes?/h2 pMOSFET transistors have two modes; depletion and enhancement. Depletion MOSFETs work like a closed switch. The current passes through when no current is applied. The current flow will stop if a negative voltage is applied. Enhancement mode MOSFETs are similar to a variable resistor and are generally more popular than the depletion mode MOSFETs. They come in n-channel or p-channel variants./p h2How do MOSFETs work?/h2 pThe pins on a MOSFET package are the Source, Gate and Drain. When a voltage is applied between the Gate and the Source terminals, current can pass through from the Drain to the Source pins. When the voltage applied to the Gate changes, the resistance from the Drain to the Source will change too. The lower the voltage applied, the higher the resistance. As the voltage increases, the resistance from the Drain to Source will decrease. Power MOSFETs are similar to standard MOSFETs but they are designed to handle a higher level of power./p h2N-Channel vs. P-Channel MOSFETs/h2 pMOSFETs are made of p-type or n-type doped silicon./li/p strongpulliN-Channel/strong MOSFETS contain additional electrons which are free to move around. They are the more popular channel type. N-Channel MOSFETs work when a positive charge is applied to the gate terminal./p/li strongpliP-Channel/strong MOSFETS substrate contains electrons and electron holes. P-Channel MOSFETs are connected to a positive voltage. These MOSFETs turn on when the voltage supplied to the Gate terminal is lower than the Source voltage./li/p/ul h2Where are MOSFETs used?/h2 pMOSFETs are found within many applications, such as microprocessors and other memory components. MOSFET transistors are most commonly used as a voltage-controlled switch within circuits./p pLooking for a href="/web/c/semiconductors/discrete-semiconductors/mosfets/" target=”_self”MOSFET Drivers?/a/p

...
Read more Read less

Filters

Viewing 81 - 100 of 11476 products
Results per page
Description Price Channel Type Maximum Continuous Drain Current Maximum Drain Source Voltage Maximum Drain Source Resistance Package Type Maximum Gate Threshold Voltage Mounting Type Minimum Gate Threshold Voltage Pin Count Maximum Gate Source Voltage Channel Mode Transistor Configuration Maximum Power Dissipation Number of Elements per Chip
RS Stock No. 540-9783
Mfr. Part No.IRF3205PBF
BrandInfineon
SGD2.09
Each
units
N 110 A 55 V 8 mΩ TO-220AB 4V Through Hole 2V 3 -20 V, +20 V Enhancement Single 200 W 1
RS Stock No. 919-4400
Mfr. Part No.IRF840LCPBF
BrandVishay
SGD1.949
Each (In a Tube of 50)
units
N 8 A 500 V 850 mΩ TO-220AB - Through Hole - 3 -30 V, +30 V Enhancement Single 125 W 1
RS Stock No. 751-4092
Mfr. Part No.DMG3420U-7
SGD0.213
Each (In a Pack of 50)
units
N 5.5 A 20 V 91 mΩ SOT-23 1.2V Surface Mount - 3 -12 V, +12 V Enhancement Single 740 mW 1
RS Stock No. 103-5086
Mfr. Part No.NTD5865NLT4G
SGD0.363
Each (On a Reel of 2500)
units
N 40 A 60 V 19 mΩ DPAK (TO-252) 2V Surface Mount - 3 -20 V, +20 V Enhancement Single 52 W 1
RS Stock No. 719-2894
Mfr. Part No.NTD5865NLT4G
SGD1.212
Each (In a Pack of 5)
units
N 40 A 60 V 19 mΩ DPAK (TO-252) 2V Surface Mount - 3 -20 V, +20 V Enhancement Single 52 W 1
RS Stock No. 922-7831
Mfr. Part No.BS250P
SGD0.51
Each (In a Bag of 4000)
units
P 230 mA 45 V 14 Ω E-Line 3.5V Through Hole - 3 -20 V, +20 V Enhancement Single 700 mW 1
RS Stock No. 919-4763
Mfr. Part No.IRF3205PBF
BrandInfineon
SGD1.544
Each (In a Tube of 50)
units
N 110 A 55 V 8 mΩ TO-220AB 4V Through Hole 2V 3 -20 V, +20 V Enhancement Single 200 W 1
RS Stock No. 541-1736
Mfr. Part No.IRF5305PBF
BrandInfineon
SGD1.23
Each
units
P 31 A 55 V 60 mΩ TO-220AB 4V Through Hole 2V 3 -20 V, +20 V Enhancement Single 110 W 1
RS Stock No. 922-7752
Mfr. Part No.ZVN3306A
SGD0.459
Each (In a Bag of 4000)
units
N 270 mA 60 V 5 Ω E-Line 2.4V Through Hole - 3 -20 V, +20 V Enhancement Single 625 mW 1
RS Stock No. 171-1917
Mfr. Part No.IPD25CN10NGATMA1
BrandInfineon
SGD1.349
Each (In a Pack of 10)
units
- - - - - - - - - - - - - -
RS Stock No. 545-2529
Mfr. Part No.BSS138LT1G
SGD0.215
Each (In a Pack of 25)
units
N 200 mA 50 V 3.5 Ω SOT-23 1.5V Surface Mount - 3 -20 V, +20 V Enhancement Single 225 mW 1
RS Stock No. 688-6964
Mfr. Part No.IRFB5615PBF
BrandInfineon
SGD2.92
Each (In a Pack of 5)
units
N 35 A 150 V 39 mΩ TO-220AB 5V Through Hole 3V 3 -20 V, +20 V Enhancement Single 144 W 1
RS Stock No. 823-1842
Mfr. Part No.ZVP2106ASTZ
SGD0.952
Each (In a Pack of 10)
units
P 280 mA 60 V 5 Ω TO-92 3.5V Through Hole - 3 -20 V, +20 V Enhancement Single 700 mW 1
RS Stock No. 145-4465
Mfr. Part No.FCA20N60F
SGD5.11
Each (In a Tube of 30)
units
N 20 A 600 V 190 mΩ TO-3PN - Through Hole 3V 3 -30 V, +30 V Enhancement Single 208 W 1
RS Stock No. 655-543
Mfr. Part No.ZVN3306A
SGD0.912
Each (In a Pack of 5)
units
N 270 mA 60 V 5 Ω E-Line 2.4V Through Hole - 3 -20 V, +20 V Enhancement Single 625 mW 1
RS Stock No. 913-3960
Mfr. Part No.IRFB3077PBF
BrandInfineon
SGD3.11
Each (In a Tube of 50)
units
N 210 A 75 V 3 mΩ TO-220AB 4V Through Hole 2V 3 -20 V, +20 V Enhancement Single 370 W 1
RS Stock No. 178-4687
Mfr. Part No.BSS138LT3G
SGD0.081
Each (On a Reel of 10000)
units
- - - - - - - - - - - - - -
RS Stock No. 857-6883
Mfr. Part No.IPP120P04P4L03AKSA1
BrandInfineon
SGD2.089
Each (In a Tube of 500)
units
P 120 A 40 V 5.2 mΩ TO-220 2.2V Through Hole 1.2V 3 -16 V, +16 V Enhancement Single 136 W 1
RS Stock No. 124-9008
Mfr. Part No.IRFB5615PBF
BrandInfineon
SGD1.923
Each (In a Tube of 50)
units
N 35 A 150 V 39 mΩ TO-220AB 5V Through Hole 3V 3 -20 V, +20 V Enhancement Single 144 W 1
RS Stock No. 601-2122
Mfr. Part No.2SK3700(F)
BrandToshiba
SGD2.52
Each
units
N 5 A 900 V 2.5 Ω TO-3PN 4V Through Hole - 3 -30 V, +30 V Enhancement Single 150 W 1
Related Products
Enhancement Mode Field Effect Transistors (FET) are produced ...
Description:
Enhancement Mode Field Effect Transistors (FET) are produced using Fairchild’s proprietary, high cell density, DMOS technology. This high density process has been designed to minimise on-state resistance, provide rugged and reliable performance and fast switching.
Enhancement Mode Field Effect Transistors (FET) are produced ...
Description:
Enhancement Mode Field Effect Transistors (FET) are produced using Fairchild’s proprietary, high cell density, DMOS technology. This high density process has been designed to minimise on-state resistance, provide rugged and reliable performance and fast switching.
Fairchild Semiconductor’s new QFET® planar MOSFETs use advanced, ...
Description:
Fairchild Semiconductor’s new QFET® planar MOSFETs use advanced, proprietary technology to offer best-in-class operating performance for a wide range of applications, including power supplies, PFC (Power Factor Correction), DC-DC Converters, Plasma Display Panels (PDP), lighting ballasts, and motion ...
Enhancement Mode Field Effect Transistors (FET) are produced ...
Description:
Enhancement Mode Field Effect Transistors (FET) are produced using Fairchild’s proprietary, high cell density, DMOS technology. This high density process has been designed to minimise on-state resistance, provide rugged and reliable performance and fast switching.