MOSFETs

MOSFETs, also known as MOSFET transistors, stands for ’Metal Oxide Semiconductor Field-Effect Transistors’. MOSFETs are transistor devices which are controlled by a capacitor. The "Field-Effect" means that they are controlled by voltage. The aim of a MOSFET is to control the flow of the current passing through from the source to the drain terminals. It acts very similarly to a switch and is used for switching or amplifying electronic signals.

These semiconductor devices are ICs (integrated circuits) which are mounted onto PCBs. MOSFETs come in a range of standard package types such as DPAK, D2PAK, DFN, I2PAK, SOIC, SOT-223 and TO-220. For more information about MOSFETs, please see our complete guide to MOSFETs.

What are depletion and enhancement modes?

MOSFET transistors have two modes; depletion and enhancement. Depletion MOSFETs work like a closed switch. The current passes through when no current is applied. The current flow will stop if a negative voltage is applied. Enhancement mode MOSFETs are like a variable resistor and are generally more popular than the depletion mode MOSFETs. They come in n-channel or p-channel variants.

How do MOSFETs work?

The pins on a MOSFET package are the Source, Gate and Drain. When a voltage is applied between the Gate and the Source terminals, current can pass through from the Drain to the Source pins. When the voltage applied to the Gate changes, the resistance from the Drain to the Source will change too. The lower the voltage applied, the higher the resistance. As the voltage increases, the resistance from the Drain to Source will decrease. Power MOSFETs are like standard MOSFETs but they are designed to handle a higher level of power.

N-Channel vs. P-Channel MOSFETs

N-Channel MOSFETs contain additional electrons which are free to move around. They are a more popular channel type. N-Channel MOSFETs work when a positive charge is applied to the gate terminal.

P-Channel MOSFETS substrate contains electrons and electron holes. P-Channel MOSFETs are connected to a positive voltage. These MOSFETs turn on when the voltage supplied to the Gate terminal is lower than the Source voltage.


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Description Price Channel Type Maximum Continuous Drain Current Maximum Drain Source Voltage Maximum Drain Source Resistance Package Type Mounting Type Pin Count Maximum Gate Source Voltage Channel Mode Maximum Gate Threshold Voltage Minimum Gate Threshold Voltage Maximum Power Dissipation Transistor Configuration Number of Elements per Chip
RS Stock No. 121-9542
Mfr. Part No.DMG3420U-7
SGD0.104
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N 5.47 A 20 V 91 mΩ SOT-23 Surface Mount 3 -12 V, +12 V Enhancement 1.2V - 740 mW Single 1
RS Stock No. 165-2431
Mfr. Part No.SUD23N06-31-GE3
BrandVishay
SGD0.611
Each (On a Reel of 2000)
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N 23 A 60 V 31 mΩ DPAK (TO-252) Surface Mount 3 -20 V, +20 V Enhancement - 1V 3 W Single 1
RS Stock No. 485-7844
Mfr. Part No.STP75NF75
SGD4.14
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N 80 A 75 V 11 mΩ TO-220 Through Hole 3 -20 V, +20 V Enhancement 4V 2V 300 W Single 1
RS Stock No. 166-2323
Mfr. Part No.FDMA908PZ
SGD0.339
Each (On a Reel of 3000)
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P 12 A 12 V 16 mΩ MLP Surface Mount 6 -8 V, +8 V Enhancement - 0.4V 2.4 W, 900 mW Single 1
RS Stock No. 922-7831
Mfr. Part No.BS250P
SGD0.528
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P 230 mA 45 V 14 Ω E-Line Through Hole 3 -20 V, +20 V Enhancement 3.5V - 700 mW Single 1
RS Stock No. 215-6688
Mfr. Part No.BS250P
SGD1.348
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P 230 mA 45 V 14 Ω E-Line Through Hole 3 -20 V, +20 V Enhancement 3.5V - 700 mW Single 1
RS Stock No. 636-5397
Mfr. Part No.SUD23N06-31-GE3
BrandVishay
SGD1.428
Each (In a Pack of 5)
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N 23 A 60 V 31 mΩ DPAK (TO-252) Surface Mount 3 -20 V, +20 V Enhancement - 1V 3 W Single 1
RS Stock No. 919-4763
Mfr. Part No.IRF3205PBF
BrandInfineon
SGD1.512
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N 110 A 55 V 8 mΩ TO-220AB Through Hole 3 -20 V, +20 V Enhancement 4V 2V 200 W Single 1
RS Stock No. 719-2894
Mfr. Part No.NTD5865NLT4G
SGD1.212
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N 40 A 60 V 19 mΩ DPAK (TO-252) Surface Mount 3 -20 V, +20 V Enhancement 2V - 52 W Single 1
RS Stock No. 920-8840
Mfr. Part No.STP75NF75
SGD2.432
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N 80 A 75 V 11 mΩ TO-220 Through Hole 3 -20 V, +20 V Enhancement 4V 2V 300 W Single 1
RS Stock No. 919-4766
Mfr. Part No.IRFZ34NPBF
BrandInfineon
SGD1.103
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N 29 A 55 V 40 mΩ TO-220AB Through Hole 3 -20 V, +20 V Enhancement 4V 2V 68 W Single 1
RS Stock No. 751-4092
Mfr. Part No.DMG3420U-7
SGD0.402
Each (In a Pack of 50)
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N 5.5 A 20 V 91 mΩ SOT-23 Surface Mount 3 -12 V, +12 V Enhancement 1.2V - 740 mW Single 1
RS Stock No. 540-9783
Mfr. Part No.IRF3205PBF
BrandInfineon
SGD2.23
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N 110 A 55 V 8 mΩ TO-220AB Through Hole 3 -20 V, +20 V Enhancement 4V 2V 200 W Single 1
RS Stock No. 919-4924
Mfr. Part No.IRF5305PBF
BrandInfineon
SGD1.491
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P 31 A 55 V 60 mΩ TO-220AB Through Hole 3 -20 V, +20 V Enhancement 4V 2V 110 W Single 1
RS Stock No. 103-5086
Mfr. Part No.NTD5865NLT4G
SGD0.447
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N 40 A 60 V 19 mΩ DPAK (TO-252) Surface Mount 3 -20 V, +20 V Enhancement 2V - 52 W Single 1
RS Stock No. 541-1736
Mfr. Part No.IRF5305PBF
BrandInfineon
SGD1.89
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P 31 A 55 V 60 mΩ TO-220AB Through Hole 3 -20 V, +20 V Enhancement 4V 2V 110 W Single 1
RS Stock No. 540-9761
Mfr. Part No.IRFZ34NPBF
BrandInfineon
SGD1.33
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N 29 A 55 V 40 mΩ TO-220AB Through Hole 3 -20 V, +20 V Enhancement 4V 2V 68 W Single 1
RS Stock No. 864-8183
Mfr. Part No.FDMA908PZ
SGD0.861
Each (In a Pack of 25)
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P 12 A 12 V 16 mΩ MLP Surface Mount 6 -8 V, +8 V Enhancement - 0.4V 2.4 W, 900 mW Single 1
RS Stock No. 301-495
Mfr. Part No.IRF840LCPBF
BrandVishay
SGD2.44
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N 8 A 500 V 850 mΩ TO-220AB Through Hole 3 -30 V, +30 V Enhancement - 2V 125 W Single 1
RS Stock No. 919-4400
Mfr. Part No.IRF840LCPBF
BrandVishay
SGD2.195
Each (In a Tube of 50)
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N 8 A 500 V 850 mΩ TO-220AB Through Hole 3 -30 V, +30 V Enhancement - - 125 W Single 1