MOSFETs

MOSFETs, also known as MOSFET transistors, stands for ’Metal Oxide Semiconductor Field-Effect Transistors’. MOSFETs are transistor devices which are controlled by a capacitor. The "Field-Effect" means that they are controlled by voltage. The aim of a MOSFET is to control the flow of the current passing through from the source to the drain terminals. It acts very similarly to a switch and is used for switching or amplifying electronic signals.

These semiconductor devices are ICs (integrated circuits) which are mounted onto PCBs. MOSFETs come in a range of standard package types such as DPAK, D2PAK, DFN, I2PAK, SOIC, SOT-223 and TO-220. For more information about MOSFETs, please see our complete guide to MOSFETs.

What are depletion and enhancement modes?

MOSFET transistors have two modes; depletion and enhancement. Depletion MOSFETs work like a closed switch. The current passes through when no current is applied. The current flow will stop if a negative voltage is applied. Enhancement mode MOSFETs are like a variable resistor and are generally more popular than the depletion mode MOSFETs. They come in n-channel or p-channel variants.

How do MOSFETs work?

The pins on a MOSFET package are the Source, Gate and Drain. When a voltage is applied between the Gate and the Source terminals, current can pass through from the Drain to the Source pins. When the voltage applied to the Gate changes, the resistance from the Drain to the Source will change too. The lower the voltage applied, the higher the resistance. As the voltage increases, the resistance from the Drain to Source will decrease. Power MOSFETs are like standard MOSFETs but they are designed to handle a higher level of power.

N-Channel vs. P-Channel MOSFETs

N-Channel MOSFETs contain additional electrons which are free to move around. They are a more popular channel type. N-Channel MOSFETs work when a positive charge is applied to the gate terminal.

P-Channel MOSFETS substrate contains electrons and electron holes. P-Channel MOSFETs are connected to a positive voltage. These MOSFETs turn on when the voltage supplied to the Gate terminal is lower than the Source voltage.


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Description Price Channel Type Maximum Continuous Drain Current Maximum Drain Source Voltage Maximum Drain Source Resistance Package Type Mounting Type Pin Count Maximum Gate Source Voltage Channel Mode Maximum Gate Threshold Voltage Minimum Gate Threshold Voltage Maximum Power Dissipation Transistor Configuration Number of Elements per Chip
RS Stock No. 806-3595
Mfr. Part No.FDPF18N50T
SGD4.44
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N 18 A 500 V 265 mΩ TO-220F Through Hole 3 -30 V, +30 V Enhancement - 3V 38.5 W Single 1
RS Stock No. 919-4860
Mfr. Part No.IRF9530NPBF
BrandInfineon
SGD1.344
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P 14 A 100 V 200 mΩ TO-220AB Through Hole 3 -20 V, +20 V Enhancement 4V 2V 79 W Single 1
RS Stock No. 165-5782
Mfr. Part No.IRFB52N15DPBF
BrandInfineon
SGD3.465
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N 51 A 150 V 32 mΩ TO-220AB Through Hole 3 -30 V, +30 V Enhancement 5V 3V 230 W Single 1
RS Stock No. 827-5182
Mfr. Part No.IPB180N06S4H1ATMA2
BrandInfineon
SGD5.08
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N 180 A 60 V 1.7 mΩ D2PAK (TO-263) Surface Mount 7 -20 V, +20 V Enhancement 4V 2V 250 W Single 1
RS Stock No. 163-1139
Mfr. Part No.NTS2101PT1G
SGD0.171
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P 1.5 A 8 V 210 mΩ SOT-323 (SC-70) Surface Mount 3 -8 V, +8 V Enhancement - 0.45V 330 mW Single 1
RS Stock No. 163-2292
Mfr. Part No.NTB60N06T4G
SGD2.132
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N 60 A 60 V 14 mΩ D2PAK (TO-263) Surface Mount 3 -20 V, +20 V Enhancement 4V - 150 W Single 1
RS Stock No. 911-4978
Mfr. Part No.BSP318SH6327XTSA1
BrandInfineon
SGD0.58
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N 2.6 A 60 V 150 mΩ SOT-223 Surface Mount 3 + Tab -20 V, +20 V Enhancement 2V 1.2V 1.8 W Single 1
RS Stock No. 911-4830
Mfr. Part No.SPW20N60C3FKSA1
BrandInfineon
SGD7.256
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N 20.7 A 650 V 190 mΩ TO-247 Through Hole 3 -20 V, +20 V Enhancement 3.9V 2.1V 208 W Single 1
RS Stock No. 165-5669
Mfr. Part No.IPB180N06S4H1ATMA2
BrandInfineon
SGD3.60
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N 180 A 60 V 1.7 mΩ D2PAK (TO-263) Surface Mount 7 -20 V, +20 V Enhancement 4V 2V 250 W Single 1
RS Stock No. 780-4755
Mfr. Part No.NTS2101PT1G
SGD0.552
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P 1.5 A 8 V 210 mΩ SOT-323 (SC-70) Surface Mount 3 -8 V, +8 V Enhancement - 0.45V 330 mW Single 1
RS Stock No. 462-3449
Mfr. Part No.SPW20N60C3FKSA1
BrandInfineon
SGD9.14
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N 21 A 650 V 190 mΩ TO-247 Through Hole 3 -20 V, +20 V Enhancement 3.9V 2.1V 208 W Single 1
RS Stock No. 753-2816
Mfr. Part No.BSP318SH6327XTSA1
BrandInfineon
SGD1.284
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N 2.6 A 60 V 150 mΩ SOT-223 Surface Mount 3 + Tab -20 V, +20 V Enhancement 2V 1.2V 1.8 W Single 1
RS Stock No. 827-3956
Mfr. Part No.IRFB52N15DPBF
BrandInfineon
SGD4.306
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N 51 A 150 V 32 mΩ TO-220AB Through Hole 3 -30 V, +30 V Enhancement 5V 3V 230 W Single 1
RS Stock No. 802-0992
Mfr. Part No.NTB60N06T4G
SGD3.78
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N 60 A 60 V 14 mΩ D2PAK (TO-263) Surface Mount 3 -20 V, +20 V Enhancement 4V - 150 W Single 1
RS Stock No. 879-3274
Mfr. Part No.VN2222LL-G
BrandMicrochip
SGD0.544
Each (In a Pack of 25)
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N 230 mA 60 V 7.5 Ω TO-92 Through Hole 3 -30 V, +30 V Enhancement 2.5V - 1 W Single 1
RS Stock No. 168-7480
Mfr. Part No.STB70NF3LLT4
SGD0.755
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N 70 A 30 V 12 mΩ D2PAK (TO-263) Surface Mount 3 -16 V, +16 V Enhancement - 1V 100 W Single 1
RS Stock No. 671-0750
Mfr. Part No.FDS9435A
SGD0.865
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P 5.3 A 30 V 50 mΩ SOIC Surface Mount 8 -25 V, +25 V Enhancement - 1V 2.5 W Single 1
RS Stock No. 166-1790
Mfr. Part No.FDS9435A
SGD0.34
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P 5.3 A 30 V 50 mΩ SOIC Surface Mount 8 -25 V, +25 V Enhancement - 1V 2.5 W Single 1
RS Stock No. 165-4217
Mfr. Part No.VN2222LL-G
BrandMicrochip
SGD0.498
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N 230 mA 60 V 7.5 Ω TO-92 Through Hole 3 -30 V, +30 V Enhancement 2.5V - 1 W Single 1
RS Stock No. 760-9862
Mfr. Part No.STB70NF3LLT4
SGD1.712
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N 70 A 30 V 12 mΩ D2PAK (TO-263) Surface Mount 3 -16 V, +16 V Enhancement - 1V 100 W Single 1