Infineon IMZ1 Type N-Channel MOSFET, 56 A, 1200 V Enhancement, 4-Pin TO-247 IMZ120R030M1HXKSA1

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SGD21.26

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1 - 9SGD19.50
10 - 99SGD18.37
100 - 249SGD16.92
250 - 499SGD15.68
500 +SGD15.03

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Packaging Options:
RS Stock No.:
222-4863
Mfr. Part No.:
IMZ120R030M1HXKSA1
Manufacturer:
Infineon
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Brand

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

56A

Maximum Drain Source Voltage Vds

1200V

Series

IMZ1

Package Type

TO-247

Mount Type

Surface

Pin Count

4

Maximum Drain Source Resistance Rds

30mΩ

Channel Mode

Enhancement

Standards/Approvals

No

Automotive Standard

No

The Infineon CoolSiC™ 1200 V, 30 mΩ SiC MOSFET in TO247-4 package build on a state-of-the-art trench semiconductor process optimized to combine performance with reliability. In comparison to traditional silicon (Si) based switches like IGBTs and MOSFETs, the SiC MOSFET offers a series of advantages.

Best in class switching and conduction losses

Benchmark high threshold voltage, Vth > 4 V

0V turn-off gate voltage for easy and simple gate drive

Wide gate-source voltage range

Robust and low loss body diode rated for hard commutation

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