Infineon IMZ1 Type N-Channel MOSFET, 26 A, 1200 V Enhancement, 4-Pin TO-247
- RS Stock No.:
- 222-4866
- Mfr. Part No.:
- IMZ120R090M1HXKSA1
- Manufacturer:
- Infineon
This image is representative of the product range
Bulk discount available
Subtotal (1 tube of 30 units)*
SGD230.58
(exc. GST)
SGD251.34
(inc. GST)
FREE delivery for orders over $150, or create a business account to enjoy free delivery from just $28
In Stock
- Plus 570 unit(s) shipping from 29 December 2025
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Units | Per unit | Per Tube* |
|---|---|---|
| 30 - 60 | SGD7.686 | SGD230.58 |
| 90 - 120 | SGD7.564 | SGD226.92 |
| 150 - 270 | SGD7.365 | SGD220.95 |
| 300 - 570 | SGD6.978 | SGD209.34 |
| 600 + | SGD6.243 | SGD187.29 |
*price indicative
- RS Stock No.:
- 222-4866
- Mfr. Part No.:
- IMZ120R090M1HXKSA1
- Manufacturer:
- Infineon
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 26A | |
| Maximum Drain Source Voltage Vds | 1200V | |
| Series | IMZ1 | |
| Package Type | TO-247 | |
| Mount Type | Surface | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 90mΩ | |
| Channel Mode | Enhancement | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 26A | ||
Maximum Drain Source Voltage Vds 1200V | ||
Series IMZ1 | ||
Package Type TO-247 | ||
Mount Type Surface | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 90mΩ | ||
Channel Mode Enhancement | ||
Standards/Approvals No | ||
Automotive Standard No | ||
The Infineon CoolSiC 1200 V, 90 mΩ SiC MOSFET in TO247-4 package build on a state-of-the-art trench semiconductor process optimized to combine performance with reliability. In comparison to traditional silicon (Si) based switches like IGBTs and MOSFETs, the SiC MOSFET offers a series of advantages.
Best in class switching and conduction losses
Benchmark high threshold voltage, Vth > 4 V
0V turn-off gate voltage for easy and simple gate drive
Wide gate-source voltage range
Robust and low loss body diode rated for hard commutation
Related links
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