DiodesZetex DMN Type N-Channel MOSFET, 9.8 A, 12 V Enhancement, 6-Pin UDFN DMN1008UFDF-7
- RS Stock No.:
- 182-7260
- Mfr. Part No.:
- DMN1008UFDF-7
- Manufacturer:
- DiodesZetex
This image is representative of the product range
Bulk discount available
Subtotal (1 pack of 50 units)*
SGD16.95
(exc. GST)
SGD18.50
(inc. GST)
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In Stock
- 2,800 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 50 - 200 | SGD0.339 | SGD16.95 |
| 250 - 450 | SGD0.271 | SGD13.55 |
| 500 - 950 | SGD0.247 | SGD12.35 |
| 1000 - 1950 | SGD0.219 | SGD10.95 |
| 2000 + | SGD0.206 | SGD10.30 |
*price indicative
- RS Stock No.:
- 182-7260
- Mfr. Part No.:
- DMN1008UFDF-7
- Manufacturer:
- DiodesZetex
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | DiodesZetex | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 9.8A | |
| Maximum Drain Source Voltage Vds | 12V | |
| Series | DMN | |
| Package Type | UDFN | |
| Mount Type | Surface | |
| Pin Count | 6 | |
| Maximum Drain Source Resistance Rds | 12.5mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 1.2V | |
| Typical Gate Charge Qg @ Vgs | 23.4nC | |
| Maximum Power Dissipation Pd | 1.7W | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 8 V | |
| Maximum Operating Temperature | 150°C | |
| Length | 2.05mm | |
| Standards/Approvals | No | |
| Height | 0.58mm | |
| Width | 2.05 mm | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand DiodesZetex | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 9.8A | ||
Maximum Drain Source Voltage Vds 12V | ||
Series DMN | ||
Package Type UDFN | ||
Mount Type Surface | ||
Pin Count 6 | ||
Maximum Drain Source Resistance Rds 12.5mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 1.2V | ||
Typical Gate Charge Qg @ Vgs 23.4nC | ||
Maximum Power Dissipation Pd 1.7W | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 8 V | ||
Maximum Operating Temperature 150°C | ||
Length 2.05mm | ||
Standards/Approvals No | ||
Height 0.58mm | ||
Width 2.05 mm | ||
Automotive Standard AEC-Q101 | ||
- COO (Country of Origin):
- CN
This MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.
0.6mm Profile – Ideal for Low Profile Applications
PCB Footprint of 4mm2
Low Gate Threshold Voltage
Fast Switching Speed
Totally Lead-Free
Halogen and Antimony Free. “Green” Device
Applications
Battery Management Application
Power Management Functions
DC-DC Converters
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