MOSFETs

MOSFETs, also known as MOSFET transistors, stands for ’Metal Oxide Semiconductor Field-Effect Transistors’. MOSFETs are transistor devices which are controlled by a capacitor. The "Field-Effect" means that they are controlled by voltage. The aim of a MOSFET is to control the flow of the current passing through from the source to the drain terminals. It acts very similarly to a switch and is used for switching or amplifying electronic signals.

These semiconductor devices are ICs (integrated circuits) which are mounted onto PCBs. MOSFETs come in a range of standard package types such as DPAK, D2PAK, DFN, I2PAK, SOIC, SOT-223 and TO-220. For more information about MOSFETs, please see our complete guide to MOSFETs.

What are depletion and enhancement modes?

MOSFET transistors have two modes; depletion and enhancement. Depletion MOSFETs work like a closed switch. The current passes through when no current is applied. The current flow will stop if a negative voltage is applied. Enhancement mode MOSFETs are like a variable resistor and are generally more popular than the depletion mode MOSFETs. They come in n-channel or p-channel variants.

How do MOSFETs work?

The pins on a MOSFET package are the Source, Gate and Drain. When a voltage is applied between the Gate and the Source terminals, current can pass through from the Drain to the Source pins. When the voltage applied to the Gate changes, the resistance from the Drain to the Source will change too. The lower the voltage applied, the higher the resistance. As the voltage increases, the resistance from the Drain to Source will decrease. Power MOSFETs are like standard MOSFETs but they are designed to handle a higher level of power.

N-Channel vs. P-Channel MOSFETs

N-Channel MOSFETs contain additional electrons which are free to move around. They are a more popular channel type. N-Channel MOSFETs work when a positive charge is applied to the gate terminal.

P-Channel MOSFETS substrate contains electrons and electron holes. P-Channel MOSFETs are connected to a positive voltage. These MOSFETs turn on when the voltage supplied to the Gate terminal is lower than the Source voltage.


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Description Price Channel Type Maximum Continuous Drain Current Maximum Drain Source Voltage Maximum Drain Source Resistance Package Type Mounting Type Pin Count Maximum Gate Source Voltage Channel Mode Maximum Gate Threshold Voltage Minimum Gate Threshold Voltage Maximum Power Dissipation Transistor Configuration Number of Elements per Chip
RS Stock No. 829-3320
Mfr. Part No.DN2530N3-G
BrandMicrochip
SGD0.964
Each (In a Pack of 10)
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N 175 mA 300 V 12 Ω TO-92 Through Hole 3 -20 V, +20 V Depletion 3.5V - 740 mW Single 1
RS Stock No. 126-3477
Mfr. Part No.NTMFS5H600NLT1G
SGD7.476
Each (In a Pack of 5)
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N 250 A 60 V 1.7 mΩ DFN Surface Mount 4 + Tab -20 V, +20 V Enhancement 2V 1.2V 160 W - 1
RS Stock No. 913-4073
Mfr. Part No.IRLML6344TRPBF
BrandInfineon
SGD0.193
Each (On a Reel of 3000)
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N 5 A 30 V 37 mΩ SOT-23 Surface Mount 3 -12 V, +12 V Enhancement 1.1V 0.5V 1.3 W Single 1
RS Stock No. 708-2484
Mfr. Part No.BSS84DW-7-F
SGD0.502
Each (In a Pack of 25)
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P 130 mA 50 V 10 Ω SOT-363 (SC-88) Surface Mount 6 -20 V, +20 V Enhancement 2V - 300 mW Isolated 2
RS Stock No. 737-7225
Mfr. Part No.IRLML6344TRPBF
BrandInfineon
SGD0.573
Each (In a Pack of 20)
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N 5 A 30 V 37 mΩ SOT-23 Surface Mount 3 -12 V, +12 V Enhancement 1.1V 0.5V 1.3 W Single 1
RS Stock No. 170-3402
Mfr. Part No.NTMFS5H600NLT1G
SGD3.717
Each (On a Reel of 1500)
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N 250 A 60 V 1.7 mΩ DFN Surface Mount 4 + Tab -20 V, +20 V Enhancement 2V 1.2V 160 W - 1
RS Stock No. 170-4346
Mfr. Part No.DN2530N3-G
BrandMicrochip
SGD0.666
Each (In a Bag of 1000)
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- - - - - - - - - - - - - -
RS Stock No. 122-0599
Mfr. Part No.BSS84DW-7-F
SGD0.169
Each (On a Reel of 3000)
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P 130 mA 50 V 10 Ω SOT-363 (SC-88) Surface Mount 6 -20 V, +20 V Enhancement 2V - 300 mW Isolated 2
RS Stock No. 920-6682
Mfr. Part No.STP12NM50
SGD5.093
Each (In a Tube of 50)
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N 12 A 500 V 350 mΩ TO-220 Through Hole 3 -30 V, +30 V Enhancement 5V 3V 160 W Single 1
RS Stock No. 178-0812
Mfr. Part No.IRF740PBF
BrandVishay
SGD1.712
Each (In a Tube of 50)
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N 10 A 400 V 550 mΩ TO-220AB Through Hole 3 -20 V, +20 V Enhancement - 2V 125 W Single 1
RS Stock No. 103-5087
Mfr. Part No.NTTFS5820NLTAG
SGD0.524
Each (On a Reel of 1500)
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N 37 A 60 V 15 mΩ WDFN Surface Mount 8 -20 V, +20 V Enhancement 2.3V - 2.7 W Single 1
RS Stock No. 419-2197
Mfr. Part No.STP12NM50
SGD5.75
Each
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N 12 A 500 V 350 mΩ TO-220 Through Hole 3 -30 V, +30 V Enhancement 5V 3V 160 W Single 1
RS Stock No. 541-0020
Mfr. Part No.IRF740PBF
BrandVishay
SGD2.52
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N 10 A 400 V 550 mΩ TO-220AB Through Hole 3 -20 V, +20 V Enhancement - 2V 125 W Single 1
RS Stock No. 719-2995
Mfr. Part No.NTTFS5820NLTAG
SGD1.228
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N 37 A 60 V 15 mΩ WDFN Surface Mount 8 -20 V, +20 V Enhancement 2.3V - 2.7 W Single 1
RS Stock No. 787-9140
Mfr. Part No.IRFP460BPBF
BrandVishay
SGD6.96
Each
units
N 20 A 500 V 250 mΩ TO-247AC Through Hole 3 -20 V, +20 V Enhancement - 2V 278 W Single 1
RS Stock No. 159-6516
Mfr. Part No.IRFP460BPBF
BrandVishay
SGD4.614
Each (In a Tube of 25)
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N 20 A 500 V 250 mΩ TO-247AC Through Hole 3 -20 V, +20 V Enhancement - 2V 278 W Single 1
RS Stock No. 166-2990
Mfr. Part No.FDPF18N50T
SGD3.696
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N 18 A 500 V 265 mΩ TO-220F Through Hole 3 -30 V, +30 V Enhancement - 3V 38.5 W Single 1
RS Stock No. 541-0828
Mfr. Part No.IRF9530NPBF
BrandInfineon
SGD2.23
Each
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P 14 A 100 V 200 mΩ TO-220AB Through Hole 3 -20 V, +20 V Enhancement 4V 2V 79 W Single 1
RS Stock No. 919-4860
Mfr. Part No.IRF9530NPBF
BrandInfineon
SGD1.283
Each (In a Tube of 50)
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P 14 A 100 V 200 mΩ TO-220AB Through Hole 3 -20 V, +20 V Enhancement 4V 2V 79 W Single 1
RS Stock No. 907-5040
Mfr. Part No.IRFSL3607PBF
BrandInfineon
SGD1.985
Each (In a Pack of 10)
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N 80 A 75 V 9 mΩ I2PAK (TO-262) Through Hole 3 -20 V, +20 V Enhancement - - 140 W Single 1