MOSFETs

MOSFETs, also known as MOSFET transistors, stands for ’Metal Oxide Semiconductor Field-Effect Transistors’. MOSFETs are transistor devices which are controlled by a capacitor. The "Field-Effect" means that they are controlled by voltage. The aim of a MOSFET is to control the flow of the current passing through from the source to the drain terminals. It acts very similarly to a switch and is used for switching or amplifying electronic signals.


These semiconductor devices are ICs (integrated circuits) which are mounted onto PCBs. MOSFETs come in a range of standard package types such as DPAK, D2PAK, DFN, I2PAK, SOIC, SOT-223 and TO-220.


What are depletion and enhancement modes?


MOSFET transistors have two modes; depletion and enhancement.
Depletion MOSFETs work like a closed switch. The current passes through when no current is applied. The current flow will stop if a negative voltage is applied.
Enhancement mode MOSFETs are similar to a variable resistor and are generally more popular than the depletion mode MOSFETs. They come in n-channel or p-channel variants.


How do MOSFETs work?


The pins on a MOSFET package are the Source, Gate and Drain. When a voltage is applied between the Gate and the Source terminals, current can pass through from the Drain to the Source pins. When the voltage applied to the Gate changes, the resistance from the Drain to the Source will change too. The lower the voltage applied, the higher the resistance. As the voltage increases, the resistance from the Drain to Source will decrease.
Power MOSFETs are similar to standard MOSFETs but they are designed to handle a higher level of power.


N-Channel vs. P-Channel MOSFETs


MOSFETs are made of p-type or n-type doped silicon.


  • N-Channel MOSFETS contain additional electrons which are free to move around. They are the more popular channel type. N-Channel MOSFETs work when a positive charge is applied to the gate terminal.


  • P-Channel MOSFETS substrate contains electrons and electron holes. P-Channel MOSFETs are connected to a positive voltage. These MOSFETs turn on when the voltage supplied to the Gate terminal is lower than the Source voltage.

Where are MOSFETs used?


MOSFETs are found within many applications, such as microprocessors and other memory components. MOSFET transistors are most commonly used as a voltage-controlled switch within circuits.



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Description Price Channel Type Maximum Continuous Drain Current Maximum Drain Source Voltage Maximum Drain Source Resistance Maximum Gate Threshold Voltage Minimum Gate Threshold Voltage Maximum Gate Source Voltage Package Type Mounting Type Pin Count Transistor Configuration Channel Mode Maximum Power Dissipation Automotive Standard
RS Stock No. 671-4736
Mfr. Part No.BS170
SGD0.485
Each (In a Pack of 10)
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N 500 mA 60 V 5 Ω 3V 0.8V -20 V, +20 V TO-92 Through Hole 3 Single Enhancement 830 mW -
RS Stock No. 166-1723
Mfr. Part No.FDMA3023PZ
SGD0.306
Each (On a Reel of 3000)
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P 2.9 A 30 V 240 mΩ - 0.4V -8 V, +8 V MLP Surface Mount 6 Isolated Enhancement 1.4 W -
RS Stock No. 725-9325
Mfr. Part No.IRLB8743PBF
BrandInfineon
SGD1.47
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N 150 A 30 V 3 mΩ 2.35V 1.35V -20 V, +20 V TO-220AB Through Hole 3 Single Enhancement 140 W -
RS Stock No. 913-4045
Mfr. Part No.IRLB8743PBF
BrandInfineon
SGD0.868
Each (In a Tube of 50)
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N 150 A 30 V 3 mΩ 2.35V 1.35V -20 V, +20 V TO-220AB Through Hole 3 Single Enhancement 140 W -
RS Stock No. 829-3320
Mfr. Part No.DN2530N3-G
BrandMicrochip
SGD0.878
Each (In a Pack of 10)
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N 175 mA 300 V 12 Ω 3.5V - -20 V, +20 V TO-92 Through Hole 3 Single Depletion 740 mW -
RS Stock No. 708-2484
Mfr. Part No.BSS84DW-7-F
SGD0.567
Each (In a Pack of 25)
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P 130 mA 50 V 10 Ω 2V - -20 V, +20 V SOT-363 (SC-88) Surface Mount 6 Isolated Enhancement 300 mW -
RS Stock No. 913-4073
Mfr. Part No.IRLML6344TRPBF
BrandInfineon
SGD0.141
Each (On a Reel of 3000)
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N 5 A 30 V 37 mΩ 1.1V 0.5V -12 V, +12 V SOT-23 Surface Mount 3 Single Enhancement 1.3 W -
RS Stock No. 122-0599
Mfr. Part No.BSS84DW-7-F
SGD0.192
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P 130 mA 50 V 10 Ω 2V - -20 V, +20 V SOT-363 (SC-88) Surface Mount 6 Isolated Enhancement 300 mW -
RS Stock No. 126-3477
Mfr. Part No.NTMFS5H600NLT1G
SGD3.90
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N 250 A 60 V 1.7 mΩ 2V 1.2V -20 V, +20 V DFN Surface Mount 4 + Tab - Enhancement 160 W -
RS Stock No. 170-4346
Mfr. Part No.DN2530N3-G
BrandMicrochip
SGD0.693
Each (In a Bag of 1000)
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- - - - - - - - - - - - - -
RS Stock No. 737-7225
Mfr. Part No.IRLML6344TRPBF
BrandInfineon
SGD0.387
Each (In a Pack of 20)
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N 5 A 30 V 37 mΩ 1.1V 0.5V -12 V, +12 V SOT-23 Surface Mount 3 Single Enhancement 1.3 W -
RS Stock No. 170-3402
Mfr. Part No.NTMFS5H600NLT1G
SGD3.32
Each (On a Reel of 1500)
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N 250 A 60 V 1.7 mΩ 2V 1.2V -20 V, +20 V DFN Surface Mount 4 + Tab - Enhancement 160 W -
RS Stock No. 103-5087
Mfr. Part No.NTTFS5820NLTAG
SGD0.363
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N 37 A 60 V 15 mΩ 2.3V - -20 V, +20 V WDFN Surface Mount 8 Single Enhancement 2.7 W -
RS Stock No. 920-6682
Mfr. Part No.STP12NM50
SGD2.357
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N 12 A 500 V 350 mΩ 5V 3V -30 V, +30 V TO-220 Through Hole 3 Single Enhancement 160 W -
RS Stock No. 719-2995
Mfr. Part No.NTTFS5820NLTAG
SGD0.426
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N 37 A 60 V 15 mΩ 2.3V - -20 V, +20 V WDFN Surface Mount 8 Single Enhancement 2.7 W -
RS Stock No. 419-2197
Mfr. Part No.STP12NM50
SGD3.83
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N 12 A 500 V 350 mΩ 5V 3V -30 V, +30 V TO-220 Through Hole 3 Single Enhancement 160 W -
RS Stock No. 178-0812
Mfr. Part No.IRF740PBF
BrandVishay
SGD1.941
Each (In a Tube of 50)
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N 10 A 400 V 550 mΩ - 2V -20 V, +20 V TO-220AB Through Hole 3 Single Enhancement 125 W -
RS Stock No. 541-0020
Mfr. Part No.IRF740PBF
BrandVishay
SGD2.27
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N 10 A 400 V 550 mΩ - 2V -20 V, +20 V TO-220AB Through Hole 3 Single Enhancement 125 W -
RS Stock No. 166-2990
Mfr. Part No.FDPF18N50T
SGD2.978
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N 18 A 500 V 265 mΩ - 3V -30 V, +30 V TO-220F Through Hole 3 Single Enhancement 38.5 W -
RS Stock No. 806-3595
Mfr. Part No.FDPF18N50T
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