Infineon GaN MOSFET, 60 A, 600 V, 8-Pin HSOF IGT60R070D1ATMA4
- RS Stock No.:
- 273-2755
- Mfr. Part No.:
- IGT60R070D1ATMA4
- Manufacturer:
- Infineon
Unavailable
RS will no longer stock this product.
- RS Stock No.:
- 273-2755
- Mfr. Part No.:
- IGT60R070D1ATMA4
- Manufacturer:
- Infineon
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Maximum Continuous Drain Current | 60 A | |
| Maximum Drain Source Voltage | 600 V | |
| Package Type | HSOF | |
| Mounting Type | Surface Mount | |
| Pin Count | 8 | |
| Channel Mode | Enhancement | |
| Number of Elements per Chip | 1 | |
| Transistor Material | GaN | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Maximum Continuous Drain Current 60 A | ||
Maximum Drain Source Voltage 600 V | ||
Package Type HSOF | ||
Mounting Type Surface Mount | ||
Pin Count 8 | ||
Channel Mode Enhancement | ||
Number of Elements per Chip 1 | ||
Transistor Material GaN | ||
The Infineon Power Transistor is a Gallium nitride CoolGaN™ 600V enhancement mode power transistor. This power transistor offers fast turn on and turn off speed, minimum switching losses and enables simple half bridge topologies with highest efficiency. The gallium nitride CoolGaN™ 600V series is qualified according to a comprehensive GaN tailored qualification well beyond existing standards. It addresses Datacom and server SMPS, telecom as well as adapter, charger, wireless charging and numerous other applications that demand highest efficiency or power density.
Reduces EMI
System cost reduction savings
Capable of reverse conduction
Superior commutation ruggedness
Enables higher operating frequency
Low gate charge and low output charge
System cost reduction savings
Capable of reverse conduction
Superior commutation ruggedness
Enables higher operating frequency
Low gate charge and low output charge