MOSFETs | N-Channel | P-Channel | RS
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    MOSFETs

    MOSFETs, also known as MOSFET transistors, stands for ’Metal Oxide Semiconductor Field-Effect Transistors’. MOSFETs are transistor devices which are controlled by a capacitor. The "Field-Effect" means that they are controlled by voltage. The aim of a MOSFET is to control the flow of the current passing through from the source to the drain terminals. It acts very similarly to a switch and is used for switching or amplifying electronic signals.

    These semiconductor devices are ICs (integrated circuits) which are mounted onto PCBs. MOSFETs come in a range of standard package types such as DPAK, D2PAK, DFN, I2PAK, SOIC, SOT-223 and TO-220. For more information about MOSFETs, please see our complete guide to MOSFETs.

    What are depletion and enhancement modes?

    MOSFET transistors have two modes; depletion and enhancement. Depletion MOSFETs work like a closed switch. The current passes through when no current is applied. The current flow will stop if a negative voltage is applied. Enhancement mode MOSFETs are like a variable resistor and are generally more popular than the depletion mode MOSFETs. They come in n-channel or p-channel variants.

    How do MOSFETs work?

    The pins on a MOSFET package are the Source, Gate and Drain. When a voltage is applied between the Gate and the Source terminals, current can pass through from the Drain to the Source pins. When the voltage applied to the Gate changes, the resistance from the Drain to the Source will change too. The lower the voltage applied, the higher the resistance. As the voltage increases, the resistance from the Drain to Source will decrease. Power MOSFETs are like standard MOSFETs but they are designed to handle a higher level of power.

    N-Channel vs. P-Channel MOSFETs

    N-Channel MOSFETs contain additional electrons which are free to move around. They are a more popular channel type. N-Channel MOSFETs work when a positive charge is applied to the gate terminal.

    P-Channel MOSFETS substrate contains electrons and electron holes. P-Channel MOSFETs are connected to a positive voltage. These MOSFETs turn on when the voltage supplied to the Gate terminal is lower than the Source voltage.

    18017 Products showing for MOSFETs

    Infineon
    N
    20 A
    1200 V
    160 mΩ
    TO-220 FP
    CoolMOS™ P7
    Through Hole
    3
    -
    Enhancement
    4.5V
    -
    -
    -
    -
    -
    -
    1
    Si
    -
    -
    Vishay
    N
    31 A
    100 V
    -
    TO-247AC
    -
    Through Hole
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    Infineon
    N
    9.4 A
    100 V
    210 mΩ
    IPAK (TO-251)
    HEXFET
    Through Hole
    3
    -20 V, +20 V
    Enhancement
    4V
    2V
    48 W
    -
    Single
    6.6mm
    +175 °C
    1
    Si
    25 nC @ 10 V
    2.3mm
    Infineon
    N
    83 A
    650 V
    0.08 O
    DDPAK
    CoolMOS™ G7
    Surface Mount
    10
    -
    Enhancement
    4V
    -
    -
    -
    -
    -
    -
    2
    -
    -
    -
    STMicroelectronics
    P
    3 A
    60 V
    160 mΩ
    SOT-223
    STripFET
    Surface Mount
    3
    -20 V, +20 V
    Enhancement
    4V
    2V
    2.6 W
    -
    Single
    6.7mm
    +175 °C
    1
    Si
    6.4 nC @ 10 V
    3.7mm
    DiodesZetex
    N, P
    600 mA, 750 mA
    20 V
    0.75 O, 1.5 O
    SOT-363
    -
    Surface Mount
    6
    -
    Enhancement
    1 V, 1 V
    -
    -
    -
    -
    -
    -
    2
    -
    -
    -
    Infineon
    N
    11 A
    800 V
    450 mΩ
    TO-247
    CoolMOS™ C3
    Through Hole
    3
    -20 V, +20 V
    Enhancement
    3.9V
    2.1V
    156 W
    -
    Single
    16.13mm
    +150 °C
    1
    Si
    64 nC @ 10 V
    5.21mm
    onsemi
    N
    26 A
    30 V
    9.2 mΩ
    Power 33
    PowerTrench
    Surface Mount
    8
    -20 V, +20 V
    Enhancement
    -
    1.2V
    2 W
    -
    Series
    3.4mm
    +150 °C
    2
    Si
    13 nC @ 10 V
    3.4mm
    STMicroelectronics
    N
    10 A
    600 V
    450 mΩ
    TO-220FP
    FDmesh
    Through Hole
    3
    -25 V, +25 V
    Enhancement
    5V
    3V
    25 W
    -
    Single
    10.4mm
    +150 °C
    1
    Si
    30 nC @ 10 V
    4.6mm
    onsemi
    N
    160 A
    30 V
    6.3 mΩ
    DPAK (TO-252)
    PowerTrench
    Surface Mount
    3
    -20 V, +20 V
    Enhancement
    -
    1.2V
    160 W
    -
    Single
    6.73mm
    +175 °C
    1
    Si
    91 nC @ 10 V
    6.22mm
    onsemi
    N
    3 A
    800 V
    4.8 Ω
    TO-220F
    QFET
    Through Hole
    3
    -30 V, +30 V
    Enhancement
    -
    3V
    39 W
    -
    Single
    10.16mm
    +150 °C
    1
    Si
    13 nC @ 10 V
    4.7mm
    Toshiba
    N
    9 A
    900 V
    1.3 Ω
    TO-3PN
    TK
    Through Hole
    3
    -30 V, +30 V
    Enhancement
    4V
    -
    250 W
    -
    Single
    15.5mm
    +150 °C
    1
    Si
    46 nC @ 10 V
    4.5mm
    ROHM
    N
    3.5 A
    30 V
    -
    SOT-457T
    -
    Surface Mount
    6
    -
    Enhancement
    -
    -
    -
    -
    -
    -
    -
    1
    Si
    -
    -
    Infineon
    N
    18 A
    40 V
    5.9 mΩ
    SOIC
    HEXFET
    Surface Mount
    8
    -20 V, +20 V
    Enhancement
    2.25V
    1.35V
    2.5 W
    -
    Single
    5mm
    +150 °C
    1
    Si
    33 nC @ 4.5 V
    4mm
    Infineon
    N
    20 A
    600 V
    190 mΩ
    TO-247
    CoolMOS S5
    Through Hole
    3
    -20 V, +20 V
    Enhancement
    5.5V
    3.5V
    208 W
    -
    Single
    15.9mm
    +150 °C
    1
    Si
    79 nC @ 10 V
    5.3mm
    onsemi
    N
    500 mA
    60 V
    5 Ω
    TO-92
    -
    Through Hole
    3
    -20 V, +20 V
    Enhancement
    3V
    0.8V
    830 mW
    -
    Single
    5.2mm
    +150 °C
    1
    Si
    -
    4.19mm
    Toshiba
    P
    4 A
    30 V
    136 mΩ
    SOT-23
    -
    Surface Mount
    3
    +20 V
    -
    2V
    0.8V
    2 W
    -
    Single
    2.9mm
    +150 °C
    1
    Si
    5.9 nC @ -10 V nC
    1.8mm
    Infineon
    N
    105 A
    150 V
    0.0083 O
    D2PAK (TO-263)
    OptiMOS™ 5
    Surface Mount
    3
    -
    Enhancement
    4.9V
    -
    -
    -
    -
    -
    -
    1
    -
    -
    -
    Infineon
    N
    13 A
    100 V
    78 mΩ
    DPAK (TO-252)
    OptiMOS 2
    Surface Mount
    3
    -20 V, +20 V
    Enhancement
    4V
    2V
    31 W
    -
    Single
    6.73mm
    +175 °C
    1
    Si
    8 nC @ 10 V
    6.22mm
    Infineon
    N
    42 A
    55 V
    0.0075 O
    DPAK (TO-252)
    HEXFET
    Surface Mount
    3
    -
    Enhancement
    20V
    -
    -
    -
    -
    -
    -
    2
    -
    -
    -
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