Infineon OptiMOS 5 Type N-Channel MOSFET & Diode, 105 A, 150 V Enhancement, 3-Pin TO-263 IPB083N15N5LFATMA1

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Subtotal (1 pack of 2 units)*

SGD18.32

(exc. GST)

SGD19.96

(inc. GST)

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Units
Per unit
Per Pack*
2 - 8SGD9.16SGD18.32
10 - 98SGD8.39SGD16.78
100 - 248SGD7.74SGD15.48
250 - 498SGD7.195SGD14.39
500 +SGD7.01SGD14.02

*price indicative

Packaging Options:
RS Stock No.:
220-7385
Mfr. Part No.:
IPB083N15N5LFATMA1
Manufacturer:
Infineon
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Brand

Infineon

Product Type

MOSFET & Diode

Channel Type

Type N

Maximum Continuous Drain Current Id

105A

Maximum Drain Source Voltage Vds

150V

Package Type

TO-263

Series

OptiMOS 5

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

8.3mΩ

Channel Mode

Enhancement

Standards/Approvals

No

Automotive Standard

No

The Infineon OptiMOS Linear FET is a revolutionary approach to avoid the trade-off between on-state resistance (R DS(on)) and linear mode capability – operation in the saturation region of an enhanced mode MOSFET. It offers the state-of-the-art R DS(on) of a trench MOSFET together with the wide safe operating area of a classic planar MOSFET.

Combination of low R DS(on) and wide safe operating area (SOA)

High max. pulse current

High continuous pulse current

Rugged linear mode operation

Low conduction losses

Higher in-rush current enabled for faster start-up and shorter down time

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