Dual N-Channel MOSFET, 10 A, 20 V, 6-Pin WDFN Diodes Inc DMN2013UFX-7

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Bulk discount available

Subtotal (1 pack of 20 units)**

SGD13.06

(exc. GST)

SGD14.24

(inc. GST)

Temporarily out of stock - back order for despatch 23/03/2026, delivery within 4 working days from despatch date*

* Delivery dates may change based on your chosen quantity and delivery address.

**price indicative

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Manufacturer	DiodesZetex
	Channel Type	N
	Maximum Continuous Drain Current	10 A
	Maximum Drain Source Voltage	20 V
	Package Type	WDFN
	Mounting Type	Surface Mount
	Pin Count	6
	Maximum Drain Source Resistance	14 mΩ
	Channel Mode	Enhancement
	Maximum Gate Threshold Voltage	1.1V
	Minimum Gate Threshold Voltage	0.5V
	Maximum Power Dissipation	2.14 W
	Transistor Configuration	Isolated
	Maximum Gate Source Voltage	-8 V, +8 V
	Length	2.1mm
	Maximum Operating Temperature	+150 °C
	Number of Elements per Chip	2
	Width	5.1mm
	Transistor Material	Si
	Typical Gate Charge @ Vgs	57.4 nC @ 8 V
	Height	0.8mm
	Minimum Operating Temperature	-55 °C
	Forward Diode Voltage	1.2V

	Select all
	Manufacturer DiodesZetex
	Channel Type N
	Maximum Continuous Drain Current 10 A
	Maximum Drain Source Voltage 20 V
	Package Type WDFN
	Mounting Type Surface Mount
	Pin Count 6
	Maximum Drain Source Resistance 14 mΩ
	Channel Mode Enhancement
	Maximum Gate Threshold Voltage 1.1V
	Minimum Gate Threshold Voltage 0.5V
	Maximum Power Dissipation 2.14 W
	Transistor Configuration Isolated
	Maximum Gate Source Voltage -8 V, +8 V
	Length 2.1mm
	Maximum Operating Temperature +150 °C
	Number of Elements per Chip 2
	Width 5.1mm
	Transistor Material Si
	Typical Gate Charge @ Vgs 57.4 nC @ 8 V
	Height 0.8mm
	Minimum Operating Temperature -55 °C
	Forward Diode Voltage 1.2V

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