onsemi Isolated 2 Type N-Channel MOSFET, 2.5 A, 30 V Enhancement, 6-Pin WDFN NTLJD4116NT1G
- RS Stock No.:
- 790-5268
- Mfr. Part No.:
- NTLJD4116NT1G
- Manufacturer:
- onsemi
This image is representative of the product range
Bulk discount available
Subtotal (1 tape of 10 units)*
SGD10.36
(exc. GST)
SGD11.29
(inc. GST)
FREE delivery for orders over $150, or create a business account to enjoy free delivery from just $28
Last RS stock
- Final 3,000 unit(s), ready to ship from another location
Units | Per unit | Per Tape* |
|---|---|---|
| 10 - 10 | SGD1.036 | SGD10.36 |
| 20 - 40 | SGD1.015 | SGD10.15 |
| 50 - 90 | SGD0.986 | SGD9.86 |
| 100 - 190 | SGD0.957 | SGD9.57 |
| 200 + | SGD0.93 | SGD9.30 |
*price indicative
- RS Stock No.:
- 790-5268
- Mfr. Part No.:
- NTLJD4116NT1G
- Manufacturer:
- onsemi
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 2.5A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Package Type | WDFN | |
| Mount Type | Surface | |
| Pin Count | 6 | |
| Maximum Drain Source Resistance Rds | 250mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 8 V | |
| Maximum Power Dissipation Pd | 2.3W | |
| Minimum Operating Temperature | 150°C | |
| Typical Gate Charge Qg @ Vgs | 5.4nC | |
| Forward Voltage Vf | 0.78V | |
| Maximum Operating Temperature | -55°C | |
| Transistor Configuration | Isolated | |
| Width | 2 mm | |
| Height | 0.75mm | |
| Length | 2mm | |
| Standards/Approvals | No | |
| Number of Elements per Chip | 2 | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand onsemi | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 2.5A | ||
Maximum Drain Source Voltage Vds 30V | ||
Package Type WDFN | ||
Mount Type Surface | ||
Pin Count 6 | ||
Maximum Drain Source Resistance Rds 250mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 8 V | ||
Maximum Power Dissipation Pd 2.3W | ||
Minimum Operating Temperature 150°C | ||
Typical Gate Charge Qg @ Vgs 5.4nC | ||
Forward Voltage Vf 0.78V | ||
Maximum Operating Temperature -55°C | ||
Transistor Configuration Isolated | ||
Width 2 mm | ||
Height 0.75mm | ||
Length 2mm | ||
Standards/Approvals No | ||
Number of Elements per Chip 2 | ||
Automotive Standard No | ||
Dual N-Channel MOSFET, ON Semiconductor
MOSFET Transistors, ON Semiconductor
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