Dual N/P-Channel-Channel MOSFET, 4.1 A, 4.6 A, 20 V, 6-Pin WDFN onsemi NTLJD3119CTBG

RS Stock No.:: 121-6306
Mfr. Part No.:: NTLJD3119CTBG
Manufacturer:: onsemi

Dual N/P-Channel-Channel MOSFET, 4.1 A, 4.6 A, 20 V, 6-Pin WDFN onsemi NTLJD3119CTBG

This image is representative of the product range

Bulk discount available

Price Each (On a Reel of 3000)

SGD0.464

(exc. GST)

SGD0.506

(inc. GST)

Temporarily out of stock - back order for despatch 08/02/2025, delivery within 4 working days from despatch date*

* Delivery dates may change based on your chosen quantity and delivery address.

Units	Per unit	Per Reel**
3000 - 3000	SGD0.464	SGD1,392.00
6000 - 9000	SGD0.452	SGD1,356.00
12000 - 27000	SGD0.441	SGD1,323.00
30000 +	SGD0.43	SGD1,290.00

**price indicative

RS Stock No.:: 121-6306
Mfr. Part No.:: NTLJD3119CTBG
Manufacturer:: onsemi

Datasheet
ESD Control Selection Guide V1

Attribute	Value
Channel Type	N, P
Maximum Continuous Drain Current	4.1 A, 4.6 A
Maximum Drain Source Voltage	20 V
Package Type	WDFN
Mounting Type	Surface Mount
Pin Count	6
Maximum Drain Source Resistance	120 mΩ, 200 mΩ
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	1V
Maximum Power Dissipation	2.3 W
Transistor Configuration	Isolated
Maximum Gate Source Voltage	-8 V, +8 V
Number of Elements per Chip	2
Width	2mm
Length	2mm
Transistor Material	Si
Typical Gate Charge @ Vgs	3.7 nC @ 4.5 V, 5.5 nC @ 4.5 V
Maximum Operating Temperature	+150 °C
Height	0.75mm
Minimum Operating Temperature	-55 °C

Dual N/P-Channel-Channel MOSFET, 4.1 A, 4.6 A, 20 V, 6-Pin WDFN onsemi NTLJD3119CTBG

Dual N/P-Channel MOSFET, ON Semiconductor

Related links