N-Channel MOSFET, 10 A, 100 V, 3-Pin TO-220AB Infineon IRL520NPBF

The Infineon range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages. And form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.

This MOSFET is designed for various high-power applications. Its N-channel configuration and enhancement mode capability make it suitable for switching and amplification tasks in automation and electrical sectors. With a maximum continuous drain current of 10 A and a maximum drain-source voltage of 100V, it provides consistent performance in demanding environments. The TO-220AB package type facilitates effective thermal management in different mounting situations.

• High power dissipation capacity of 48W for robust performance
• Low drain-source resistance of 180mΩ enhances efficiency
• Wide operating temperature range from -55°C to +175°C ensures reliability
• Suitable for through-hole mounting, facilitating easy integration
• Enhanced gate threshold voltage between 1V and 2V optimises control
• Single transistor configuration simplifies design and assembly

• Utilised in power supply circuits for efficient voltage regulation
• Employed in motor control systems due to its high current capacity
• Applicable in industrial automation for effective switching operations
• Integrated into power management solutions for energy-efficient designs

Effective heatsinking is essential to maintain operational efficiency and prevent overheating, especially under high load conditions.

While direct replacements might be possible, it is crucial to consider specifications such as current and voltage ratings, as well as gate drive requirements, to ensure compatibility and functionality.

The maximum gate-source voltage should not exceed -16V to +16V to avoid damage to the device and ensure reliable operation.

Use electrostatic discharge (ESD) precautions and ensure secure connections to prevent failures or intermittent operation once installed in a circuit.

This MOSFET is suitable for switching applications, but care should be taken regarding gate drive speed and load conditions to avoid performance degradation at higher frequencies.

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.