N-Channel MOSFET, 140 A, 30 V, 3-Pin TO-220AB Infineon IRL3803PBF

The Infineon range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages. And form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.

This N-channel MOSFET is intended for high efficiency in power applications, with a low Rds(on) making it suitable for various electronic and mechanical systems. Through advanced processing techniques, it provides exceptional reliability in challenging environments, operating within a temperature range of -55°C to +175°C. The component is capable of supporting high power dissipation needs, making it an essential element in automation and industrial applications.

• Fast switching speed enhances overall system performance
• High continuous drain current of 140A accommodates various applications
• Low maximum drain-source resistance reduces power loss
• Dual gate-source voltage ratings offer design flexibility
• Fully avalanche rated to maintain performance under stress
• Efficient thermal management with TO-220AB package design

• Used in power management circuits and motor control
• Suitable for industrial automation systems that require dependability
• Applied in switching power supplies for electronic devices
• Fit for renewable energy system

The maximum continuous drain current is 140A at 25°C and decreases to 98A at 100°C under standard conditions.

It incorporates low thermal resistance, allowing for power dissipation up to 200W, with a linear derating factor of 1.3 W/°C.

The enhancement mode permits operation without substantial gate voltage, enabling efficient control over the switching mechanism, which is essential for low-power applications.

It accommodates a gate-to-source voltage range of ±16V and a maximum drain-source breakdown voltage of 30V, enhancing versatility in circuit designs.

Yes, it operates efficiently in extreme conditions, with a junction temperature rating of up to +175°C.

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MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.