N-Channel MOSFET, 5.7 A, 800 V, 3-Pin DPAK Infineon IPD80R1K0CEATMA1

RS Stock No.:: 914-0223
Mfr. Part No.:: IPD80R1K0CEATMA1
Manufacturer:: Infineon

N-Channel MOSFET, 5.7 A, 800 V, 3-Pin DPAK Infineon IPD80R1K0CEATMA1

This image is representative of the product range

Bulk discount available

Price Each (In a Pack of 10)

SGD1.686

(exc. GST)

SGD1.838

(inc. GST)

2340 In stock for delivery within 4 working days*

* Delivery dates may change based on your chosen quantity and delivery address.

Units	Per unit	Per Pack**
10 - 40	SGD1.686	SGD16.86
50 - 190	SGD1.678	SGD16.78
200 - 490	SGD1.649	SGD16.49
500 - 1490	SGD1.576	SGD15.76
1500 +	SGD1.366	SGD13.66

**price indicative

RS Stock No.:: 914-0223
Mfr. Part No.:: IPD80R1K0CEATMA1
Manufacturer:: Infineon

IPD80R1K0CE MOSFET CoolMOS CE
ESD Control Selection Guide V1

Attribute	Value
Channel Type	N
Maximum Continuous Drain Current	5.7 A
Maximum Drain Source Voltage	800 V
Package Type	DPAK (TO-252)
Series	CoolMOS™ CE
Mounting Type	Surface Mount
Pin Count	3
Maximum Drain Source Resistance	950 mΩ
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	3.9V
Minimum Gate Threshold Voltage	2.1V
Maximum Power Dissipation	83 W
Transistor Configuration	Single
Maximum Gate Source Voltage	-30 V, +30 V
Width	6.22mm
Typical Gate Charge @ Vgs	31 nC @ 10 V
Length	6.73mm
Maximum Operating Temperature	+150 °C
Number of Elements per Chip	1
Transistor Material	Si
Minimum Operating Temperature	-55 °C
Forward Diode Voltage	1.2V
Height	2.41mm

N-Channel MOSFET, 5.7 A, 800 V, 3-Pin DPAK Infineon IPD80R1K0CEATMA1

Infineon CoolMOS™ CE Power MOSFET

Related links