Infineon CoolMOS CE Type N-Channel MOSFET, 2.6 A, 600 V Enhancement, 3-Pin TO-251
- RS Stock No.:
- 217-2576
- Mfr. Part No.:
- IPS60R3K4CEAKMA1
- Manufacturer:
- Infineon
This image is representative of the product range
Bulk discount available
Subtotal (1 tube of 75 units)*
SGD24.525
(exc. GST)
SGD26.70
(inc. GST)
FREE delivery for orders over $150, or create a business account to enjoy free delivery from just $28
In Stock
- 825 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Tube* |
|---|---|---|
| 75 - 150 | SGD0.327 | SGD24.53 |
| 225 - 300 | SGD0.322 | SGD24.15 |
| 375 - 675 | SGD0.314 | SGD23.55 |
| 750 - 1425 | SGD0.297 | SGD22.28 |
| 1500 + | SGD0.266 | SGD19.95 |
*price indicative
- RS Stock No.:
- 217-2576
- Mfr. Part No.:
- IPS60R3K4CEAKMA1
- Manufacturer:
- Infineon
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 2.6A | |
| Maximum Drain Source Voltage Vds | 600V | |
| Series | CoolMOS CE | |
| Package Type | TO-251 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 3.4Ω | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 38W | |
| Forward Voltage Vf | 0.9V | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Typical Gate Charge Qg @ Vgs | 6.7nC | |
| Minimum Operating Temperature | -40°C | |
| Maximum Operating Temperature | 150°C | |
| Height | 9.82mm | |
| Standards/Approvals | No | |
| Length | 6.73mm | |
| Width | 2.4 mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 2.6A | ||
Maximum Drain Source Voltage Vds 600V | ||
Series CoolMOS CE | ||
Package Type TO-251 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 3.4Ω | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 38W | ||
Forward Voltage Vf 0.9V | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Typical Gate Charge Qg @ Vgs 6.7nC | ||
Minimum Operating Temperature -40°C | ||
Maximum Operating Temperature 150°C | ||
Height 9.82mm | ||
Standards/Approvals No | ||
Length 6.73mm | ||
Width 2.4 mm | ||
Automotive Standard No | ||
The Infineon CoolMOS™ CE is suitable for hard and soft switching applications and as modern superjunction, it delivers low conduction and switching losses improving efficiency and ultimately reduces power consumption. 600V, 650V and 700V CoolMOS™ CE combine the optimal R DS(on) and package offering suitable in low power chargers for mobile phones and tablets.
Narrow margins between typical and max R DS(on)
Reduced energy stored in output capacitance (E oss)
Good body diode ruggedness and reduced reverse recovery charge (Q rr)
Optimized integrated R g
Related links
- Infineon CoolMOS CE Type N-Channel MOSFET 600 V Enhancement, 3-Pin TO-251 IPS60R3K4CEAKMA1
- Infineon CoolMOS CE Type N-Channel MOSFET 600 V Enhancement, 3-Pin TO-251
- Infineon CoolMOS CE Type N-Channel MOSFET 600 V Enhancement, 3-Pin TO-251 IPS60R800CEAKMA1
- Infineon CoolMOS CE Type N-Channel MOSFET 650 V Enhancement, 3-Pin TO-251
- Infineon CoolMOS CE Type N-Channel MOSFET 700 V Enhancement, 3-Pin TO-251
- Infineon CoolMOS CE Type N-Channel MOSFET 650 V Enhancement, 3-Pin TO-251 IPS65R1K0CEAKMA2
- Infineon CoolMOS CE Type N-Channel MOSFET 700 V Enhancement, 3-Pin TO-251 IPSA70R950CEAKMA1
- Infineon 600V CoolMOS CE Type N-Channel MOSFET 600 V, 3-Pin TO-251