Vishay E Type N-Channel MOSFET, 29 A, 600 V Enhancement, 3-Pin TO-220 SiHF30N60E-GE3
- RS Stock No.:
- 903-4490
- Mfr. Part No.:
- SiHF30N60E-GE3
- Manufacturer:
- Vishay
This image is representative of the product range
Bulk discount available
Subtotal (1 pack of 2 units)*
SGD16.30
(exc. GST)
SGD17.76
(inc. GST)
FREE delivery for orders over $150, or create a business account to enjoy free delivery from just $28
Being discontinued
- Final 850 unit(s), ready to ship from another location
Units | Per unit | Per Pack* |
|---|---|---|
| 2 - 8 | SGD8.15 | SGD16.30 |
| 10 - 38 | SGD5.855 | SGD11.71 |
| 40 - 98 | SGD5.735 | SGD11.47 |
| 100 - 198 | SGD5.615 | SGD11.23 |
| 200 + | SGD5.50 | SGD11.00 |
*price indicative
- RS Stock No.:
- 903-4490
- Mfr. Part No.:
- SiHF30N60E-GE3
- Manufacturer:
- Vishay
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 29A | |
| Maximum Drain Source Voltage Vds | 600V | |
| Package Type | TO-220 | |
| Series | E | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 125mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 85nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 37W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Forward Voltage Vf | 1.3V | |
| Maximum Operating Temperature | 150°C | |
| Length | 10.63mm | |
| Standards/Approvals | No | |
| Width | 4.83 mm | |
| Height | 16.12mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 29A | ||
Maximum Drain Source Voltage Vds 600V | ||
Package Type TO-220 | ||
Series E | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 125mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 85nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 37W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Forward Voltage Vf 1.3V | ||
Maximum Operating Temperature 150°C | ||
Length 10.63mm | ||
Standards/Approvals No | ||
Width 4.83 mm | ||
Height 16.12mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
N-Channel MOSFET, E Series, Low Figure-of-Merit, Vishay Semiconductor
The E Series Power MOSFETs from Vishay are high-voltage transistors featuring ultra-low maximum on-resistance, low figure of merit and fast switching. They are available in a wide range of current ratings. Typical applications include servers and telecom power supplies, LED lighting, flyback converters, power factor correction (PFC) and switch mode power supplies (SMPS).
Features
Low figure-of-merit (FOM) RDS(on) x Qg
Low input capacitance (Ciss)
Low on-resistance (RDS(on))
Ultra-low gate charge (Qg)
Fast switching
Reduced switching and conduction losses
MOSFET Transistors, Vishay Semiconductor
Related links
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- Vishay E Type N-Channel MOSFET 600 V Enhancement, 3-Pin TO-263
- Vishay E Type N-Channel MOSFET 600 V Enhancement, 3-Pin TO-247
- Vishay E Type N-Channel Power MOSFET 600 V Enhancement, 3-Pin TO-220 SIHA100N60E-GE3
- Vishay SiHA105N60EF Type N-Channel MOSFET 600 V Enhancement, 3-Pin TO-220 SIHA105N60EF-GE3
- Vishay E Type N-Channel MOSFET 850 V Enhancement, 3-Pin TO-220 SiHA5N80AE-GE3