Vishay EF Series N-Channel MOSFET, 33 A, 600 V, 3-Pin TO-247AC SiHG33N60EF-GE3

RS Stock No.:: 903-4484
Mfr. Part No.:: SiHG33N60EF-GE3
Manufacturer:: Vishay

Vishay EF Series N-Channel MOSFET, 33 A, 600 V, 3-Pin TO-247AC SiHG33N60EF-GE3

This image is representative of the product range

Bulk discount available

Subtotal (1 unit)**

SGD8.35

(exc. GST)

SGD9.10

(inc. GST)

Temporarily out of stock - back order for despatch 30/08/2025, delivery within 4 working days from despatch date*

* Delivery dates may change based on your chosen quantity and delivery address.

FREE delivery for orders over SGD150.00 (ex GST)

Units	Per unit
1 - 2	SGD8.35
3 - 4	SGD8.04
5 +	SGD7.55

**price indicative

RS Stock No.:: 903-4484
Mfr. Part No.:: SiHG33N60EF-GE3
Manufacturer:: Vishay

SiHG33N60EF, EF Series Power MOSFET with Fast Body Diode
ESD Control Selection Guide V1

Attribute	Value
Channel Type	N
Maximum Continuous Drain Current	33 A
Maximum Drain Source Voltage	600 V
Series	EF Series
Package Type	TO-247AC
Mounting Type	Through Hole
Pin Count	3
Maximum Drain Source Resistance	98 mΩ
Channel Mode	Enhancement
Minimum Gate Threshold Voltage	2V
Maximum Power Dissipation	278 W
Transistor Configuration	Single
Maximum Gate Source Voltage	-30 V, +30 V
Typical Gate Charge @ Vgs	103 nC @ 10 V
Transistor Material	Si
Maximum Operating Temperature	+150 °C
Number of Elements per Chip	1
Width	5.31mm
Length	15.87mm
Forward Diode Voltage	1.2V
Minimum Operating Temperature	-55 °C
Height	20.82mm

Vishay EF Series N-Channel MOSFET, 33 A, 600 V, 3-Pin TO-247AC SiHG33N60EF-GE3

FREE delivery for orders over SGD150.00 (ex GST)

N-Channel MOSFET with Fast Diode, EF Series, Vishay Semiconductor

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