N-Channel MOSFET, 28 A, 600 V, 3-Pin D2PAK Vishay SiHB28N60EF-GE3

RS Stock No.:: 903-4504
Mfr. Part No.:: SiHB28N60EF-GE3
Manufacturer:: Vishay

N-Channel MOSFET, 28 A, 600 V, 3-Pin D2PAK Vishay SiHB28N60EF-GE3

This image is representative of the product range

Bulk discount available

Price Each (In a Pack of 2)**

SGD8.425

(exc. GST)

SGD9.183

(inc. GST)

642 In stock for delivery within 4 working days*

* Delivery dates may change based on your chosen quantity and delivery address.

FREE delivery for orders over SGD250.00 (ex GST)

Units	Per unit	Per Pack**
2 - 4	SGD8.425	SGD16.85
6 - 8	SGD8.11	SGD16.22
10 +	SGD7.605	SGD15.21

**price indicative

RS Stock No.:: 903-4504
Mfr. Part No.:: SiHB28N60EF-GE3
Manufacturer:: Vishay

SiHB28N60EF, EF Series Power MOSFET with Fast Body Diode
ESD Control Selection Guide V1

Attribute	Value
Channel Type	N
Maximum Continuous Drain Current	28 A
Maximum Drain Source Voltage	600 V
Package Type	D2PAK (TO-263)
Series	EF Series
Mounting Type	Surface Mount
Pin Count	3
Maximum Drain Source Resistance	123 mΩ
Channel Mode	Enhancement
Minimum Gate Threshold Voltage	2V
Maximum Power Dissipation	250 W
Transistor Configuration	Single
Maximum Gate Source Voltage	-30 V, +30 V
Maximum Operating Temperature	+150 °C
Typical Gate Charge @ Vgs	80 nC @ 10 V
Length	10.67mm
Transistor Material	Si
Width	9.65mm
Number of Elements per Chip	1
Minimum Operating Temperature	-55 °C
Forward Diode Voltage	1.2V
Height	4.83mm

N-Channel MOSFET, 28 A, 600 V, 3-Pin D2PAK Vishay SiHB28N60EF-GE3

FREE delivery for orders over SGD250.00 (ex GST)

N-Channel MOSFET with Fast Diode, EF Series, Vishay Semiconductor

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