Vishay SiHB125N60EF Type N-Channel MOSFET, 25 A, 600 V Enhancement, 3-Pin TO-263 SIHB125N60EF-GE3
- RS Stock No.:
- 204-7246
- Mfr. Part No.:
- SIHB125N60EF-GE3
- Manufacturer:
- Vishay
This image is representative of the product range
Bulk discount available
Subtotal (1 pack of 5 units)*
SGD21.00
(exc. GST)
SGD22.90
(inc. GST)
FREE delivery for orders over $150, or create a business account to enjoy free delivery from just $28
In Stock
- Plus 1,000 unit(s) shipping from 29 December 2025
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 5 - 95 | SGD4.20 | SGD21.00 |
| 100 - 495 | SGD4.074 | SGD20.37 |
| 500 - 995 | SGD3.912 | SGD19.56 |
| 1000 - 1495 | SGD3.716 | SGD18.58 |
| 1500 + | SGD3.494 | SGD17.47 |
*price indicative
- RS Stock No.:
- 204-7246
- Mfr. Part No.:
- SIHB125N60EF-GE3
- Manufacturer:
- Vishay
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 25A | |
| Maximum Drain Source Voltage Vds | 600V | |
| Series | SiHB125N60EF | |
| Package Type | TO-263 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 125mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 31nC | |
| Forward Voltage Vf | 1.2V | |
| Maximum Gate Source Voltage Vgs | 30 V | |
| Maximum Power Dissipation Pd | 179W | |
| Maximum Operating Temperature | 150°C | |
| Height | 4.06mm | |
| Length | 14.61mm | |
| Standards/Approvals | No | |
| Width | 9.65 mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 25A | ||
Maximum Drain Source Voltage Vds 600V | ||
Series SiHB125N60EF | ||
Package Type TO-263 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 125mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 31nC | ||
Forward Voltage Vf 1.2V | ||
Maximum Gate Source Voltage Vgs 30 V | ||
Maximum Power Dissipation Pd 179W | ||
Maximum Operating Temperature 150°C | ||
Height 4.06mm | ||
Length 14.61mm | ||
Standards/Approvals No | ||
Width 9.65 mm | ||
Automotive Standard No | ||
The Vishay EF Series Power MOSFET With Fast Body Diode has a 4th generation E series technology. It has reduced switching and conduction losses.
Avalanche energy rated (UIS)
Low figure-of-merit (FOM) Ron x Qg
Related links
- Vishay SiHB125N60EF Type N-Channel MOSFET 600 V Enhancement, 3-Pin TO-263
- Infineon IPB60R Type N-Channel MOSFET 600 V Enhancement, 3-Pin TO-263 IPB60R090CFD7ATMA1
- Infineon IPB60R Type N-Channel MOSFET 600 V Enhancement, 3-Pin TO-263
- Vishay E Type N-Channel MOSFET 600 V Enhancement, 4-Pin PowerPAK SIHH26N60E-T1-GE3
- Toshiba DTMOSIV Type N-Channel MOSFET 600 V EnhancementS1X(S
- Toshiba DTMOSIV Type N-Channel MOSFET 600 V EnhancementS5X(M
- Infineon CoolMOS CFD7 Type N-Channel MOSFET 600 V Enhancement, 3-Pin TO-220 IPP60R090CFD7XKSA1
- Infineon CoolMOS CFD7 Type N-Channel MOSFET 600 V Enhancement, 3-Pin TO-220