Vishay EF Type N-Channel MOSFET, 8.4 A, 600 V Enhancement, 3-Pin TO-220 SiHA186N60EF-GE3
- RS Stock No.:
- 210-4963
- Mfr. Part No.:
- SiHA186N60EF-GE3
- Manufacturer:
- Vishay
This image is representative of the product range
Bulk discount available
Subtotal (1 pack of 5 units)*
SGD17.89
(exc. GST)
SGD19.50
(inc. GST)
Add 45 units to get free delivery
In Stock
- Plus 960 unit(s) shipping from 16 February 2026
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Units | Per unit | Per Pack* |
|---|---|---|
| 5 - 5 | SGD3.578 | SGD17.89 |
| 10 - 95 | SGD3.40 | SGD17.00 |
| 100 - 245 | SGD3.228 | SGD16.14 |
| 250 - 495 | SGD3.068 | SGD15.34 |
| 500 + | SGD2.916 | SGD14.58 |
*price indicative
- RS Stock No.:
- 210-4963
- Mfr. Part No.:
- SiHA186N60EF-GE3
- Manufacturer:
- Vishay
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 8.4A | |
| Maximum Drain Source Voltage Vds | 600V | |
| Package Type | TO-220 | |
| Series | EF | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 168mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 33W | |
| Maximum Gate Source Voltage Vgs | 30 V | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 21nC | |
| Forward Voltage Vf | 1.2V | |
| Maximum Operating Temperature | 150°C | |
| Length | 28.1mm | |
| Width | 9.7 mm | |
| Height | 4.3mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 8.4A | ||
Maximum Drain Source Voltage Vds 600V | ||
Package Type TO-220 | ||
Series EF | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 168mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 33W | ||
Maximum Gate Source Voltage Vgs 30 V | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 21nC | ||
Forward Voltage Vf 1.2V | ||
Maximum Operating Temperature 150°C | ||
Length 28.1mm | ||
Width 9.7 mm | ||
Height 4.3mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
The Vishay EF Series Power MOSFET With Fast Body Diode has Thin-Lead TO-220 FULLPAK package type.
4th generation E series technology
Low figure-of-merit (FOM) Ron x Qg
Low effective capacitance (Co(er))
Reduced switching and conduction losses
Avalanche energy rated (UIS)
Related links
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