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N-Channel MOSFET, 8.1 A, 650 V, 3-Pin DPAK Infineon IPD60R520C6ATMA1

RS Stock No.:: 897-7545P
Mfr. Part No.:: IPD60R520C6ATMA1
Manufacturer:: Infineon

N-Channel MOSFET, 8.1 A, 650 V, 3-Pin DPAK Infineon IPD60R520C6ATMA1

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RS Stock No.:: 897-7545P
Mfr. Part No.:: IPD60R520C6ATMA1
Manufacturer:: Infineon

Specifications

Technical data sheets

Legislation and Compliance

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Select all	Attribute	Value
	Brand	Infineon
	Channel Type	N
	Maximum Continuous Drain Current	8.1 A
	Maximum Drain Source Voltage	650 V
	Package Type	DPAK (TO-252)
	Mounting Type	Surface Mount
	Pin Count	3
	Maximum Drain Source Resistance	520 mΩ
	Channel Mode	Enhancement
	Maximum Power Dissipation	66 W
	Transistor Configuration	Single
	Maximum Gate Source Voltage	-30 V, +30 V
	Width	6.22mm
	Transistor Material	Si
	Typical Gate Charge @ Vgs	23.4 nC @ 10 V
	Length	6.73mm
	Number of Elements per Chip	1
	Maximum Operating Temperature	+150 °C
	Height	2.41mm
	Forward Diode Voltage	0.9V
	Series	CoolMOS C6
	Minimum Operating Temperature	-55 °C

	Select all
	Brand Infineon
	Channel Type N
	Maximum Continuous Drain Current 8.1 A
	Maximum Drain Source Voltage 650 V
	Package Type DPAK (TO-252)
	Mounting Type Surface Mount
	Pin Count 3
	Maximum Drain Source Resistance 520 mΩ
	Channel Mode Enhancement
	Maximum Power Dissipation 66 W
	Transistor Configuration Single
	Maximum Gate Source Voltage -30 V, +30 V
	Width 6.22mm
	Transistor Material Si
	Typical Gate Charge @ Vgs 23.4 nC @ 10 V
	Length 6.73mm
	Number of Elements per Chip 1
	Maximum Operating Temperature +150 °C
	Height 2.41mm
	Forward Diode Voltage 0.9V
	Series CoolMOS C6
	Minimum Operating Temperature -55 °C

RoHS Status: Not Applicable

N-Channel MOSFET, 8.1 A, 650 V, 3-Pin DPAK Infineon IPD60R520C6ATMA1

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