Vishay SiHF634S Type N-Channel MOSFET, 8.1 A, 250 V Enhancement, 3-Pin TO-263 SIHF634S-GE3
- RS Stock No.:
- 815-2632
- Mfr. Part No.:
- SIHF634S-GE3
- Manufacturer:
- Vishay
This image is representative of the product range
Bulk discount available
Subtotal (1 pack of 10 units)*
SGD22.64
(exc. GST)
SGD24.68
(inc. GST)
FREE delivery for orders over $150, or create a business account to enjoy free delivery from just $28
Temporarily out of stock
- Shipping from 13 October 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 10 - 90 | SGD2.264 | SGD22.64 |
| 100 - 240 | SGD2.219 | SGD22.19 |
| 250 - 490 | SGD2.174 | SGD21.74 |
| 500 - 990 | SGD2.13 | SGD21.30 |
| 1000 + | SGD2.089 | SGD20.89 |
*price indicative
- RS Stock No.:
- 815-2632
- Mfr. Part No.:
- SIHF634S-GE3
- Manufacturer:
- Vishay
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 8.1A | |
| Maximum Drain Source Voltage Vds | 250V | |
| Package Type | TO-263 | |
| Series | SiHF634S | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 450mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 74W | |
| Forward Voltage Vf | 2V | |
| Typical Gate Charge Qg @ Vgs | 41nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Height | 4.83mm | |
| Standards/Approvals | No | |
| Length | 10.67mm | |
| Width | 9.65 mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 8.1A | ||
Maximum Drain Source Voltage Vds 250V | ||
Package Type TO-263 | ||
Series SiHF634S | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 450mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 74W | ||
Forward Voltage Vf 2V | ||
Typical Gate Charge Qg @ Vgs 41nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Height 4.83mm | ||
Standards/Approvals No | ||
Length 10.67mm | ||
Width 9.65 mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
N-Channel MOSFET, 200V to 250V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
Related links
- Vishay SiHF634S Type N-Channel MOSFET 250 V Enhancement, 3-Pin TO-263
- Vishay SiHF840S Type N-Channel MOSFET 500 V Enhancement, 3-Pin TO-263 SIHF840STRL-GE3
- Vishay SiHF840S Type N-Channel MOSFET 500 V Enhancement, 3-Pin TO-263
- Vishay Si4435DDY Type P-Channel MOSFET 30 V Enhancement, 8-Pin SOIC SI4435DDY-T1-GE3
- Infineon IMB Type N-Channel MOSFET 1200 V Enhancement, 7-Pin PG-TO263-7 IMBG120R234M2HXTMA1
- Infineon Dual HEXFET 2 Type N-Channel MOSFET 30 V Enhancement, 8-Pin SOIC IRL6372TRPBF
- Infineon Dual HEXFET 2 Type N-Channel MOSFET 30 V Enhancement, 8-Pin SOIC
- Vishay SiHB22N60EF Type N-Channel MOSFET 600 V Enhancement, 3-Pin TO-263 SIHB22N60EF-GE3