N-Channel MOSFET, 8.1 A, 250 V, 3-Pin D2PAK Vishay SIHF634S-GE3
- RS Stock No.:
- 815-2632
- Mfr. Part No.:
- SIHF634S-GE3
- Manufacturer:
- Vishay
Bulk discount available
Subtotal (1 pack of 10 units)**
SGD22.64
(exc. GST)
SGD24.68
(inc. GST)
Temporarily out of stock - back order for despatch 07/07/2025, delivery within 4 working days from despatch date*
* Delivery dates may change based on your chosen quantity and delivery address.
FREE delivery for orders over SGD250.00 (ex GST)
Units | Per unit | Per Pack** |
---|---|---|
10 - 90 | SGD2.264 | SGD22.64 |
100 - 240 | SGD2.219 | SGD22.19 |
250 - 490 | SGD2.174 | SGD21.74 |
500 - 990 | SGD2.13 | SGD21.30 |
1000 + | SGD2.089 | SGD20.89 |
**price indicative
- RS Stock No.:
- 815-2632
- Mfr. Part No.:
- SIHF634S-GE3
- Manufacturer:
- Vishay
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
---|---|---|
Manufacturer | Vishay | |
Channel Type | N | |
Maximum Continuous Drain Current | 8.1 A | |
Maximum Drain Source Voltage | 250 V | |
Package Type | D2PAK (TO-263) | |
Mounting Type | Surface Mount | |
Pin Count | 3 | |
Maximum Drain Source Resistance | 450 mΩ | |
Channel Mode | Enhancement | |
Minimum Gate Threshold Voltage | 2V | |
Maximum Power Dissipation | 74 W | |
Transistor Configuration | Single | |
Maximum Gate Source Voltage | -20 V, +20 V | |
Transistor Material | Si | |
Width | 9.65mm | |
Typical Gate Charge @ Vgs | 41 nC @ 10 V | |
Length | 10.67mm | |
Maximum Operating Temperature | +150 °C | |
Number of Elements per Chip | 1 | |
Minimum Operating Temperature | -55 °C | |
Height | 4.83mm | |
Select all | ||
---|---|---|
Manufacturer Vishay | ||
Channel Type N | ||
Maximum Continuous Drain Current 8.1 A | ||
Maximum Drain Source Voltage 250 V | ||
Package Type D2PAK (TO-263) | ||
Mounting Type Surface Mount | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 450 mΩ | ||
Channel Mode Enhancement | ||
Minimum Gate Threshold Voltage 2V | ||
Maximum Power Dissipation 74 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Transistor Material Si | ||
Width 9.65mm | ||
Typical Gate Charge @ Vgs 41 nC @ 10 V | ||
Length 10.67mm | ||
Maximum Operating Temperature +150 °C | ||
Number of Elements per Chip 1 | ||
Minimum Operating Temperature -55 °C | ||
Height 4.83mm | ||
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