MPN

N-Channel MOSFET, 21 A, 650 V, 3-Pin D2PAK Infineon IPB60R165CPATMA1

Name: N-Channel MOSFET, 21 A, 650 V, 3-Pin D2PAK Infineon IPB60R165CPATMA1
Brand: Infineon
SKU: 825-9178P
Availability: OutOfStock

Currently unavailable

We don’t know if this item will be back in stock, it is being discontinued by the manufacturer.

Specifications

Technical data sheets

Legislation and Compliance

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Infineon
	Channel Type	N
	Maximum Continuous Drain Current	21 A
	Maximum Drain Source Voltage	650 V
	Package Type	D2PAK (TO-263)
	Mounting Type	Surface Mount
	Pin Count	3
	Maximum Drain Source Resistance	165 mΩ
	Channel Mode	Enhancement
	Maximum Gate Threshold Voltage	3.5V
	Minimum Gate Threshold Voltage	2.5V
	Maximum Power Dissipation	192 W
	Transistor Configuration	Single
	Maximum Gate Source Voltage	-30 V, +30 V
	Typical Gate Charge @ Vgs	39 nC @ 10 V
	Maximum Operating Temperature	+150 °C
	Transistor Material	Si
	Width	9.45mm
	Number of Elements per Chip	1
	Length	10.31mm
	Minimum Operating Temperature	-55 °C
	Series	CoolMOS CP
	Height	4.572mm

	Select all
	Brand Infineon
	Channel Type N
	Maximum Continuous Drain Current 21 A
	Maximum Drain Source Voltage 650 V
	Package Type D2PAK (TO-263)
	Mounting Type Surface Mount
	Pin Count 3
	Maximum Drain Source Resistance 165 mΩ
	Channel Mode Enhancement
	Maximum Gate Threshold Voltage 3.5V
	Minimum Gate Threshold Voltage 2.5V
	Maximum Power Dissipation 192 W
	Transistor Configuration Single
	Maximum Gate Source Voltage -30 V, +30 V
	Typical Gate Charge @ Vgs 39 nC @ 10 V
	Maximum Operating Temperature +150 °C
	Transistor Material Si
	Width 9.45mm
	Number of Elements per Chip 1
	Length 10.31mm
	Minimum Operating Temperature -55 °C
	Series CoolMOS CP
	Height 4.572mm

RoHS Status: Not Applicable

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