N-Channel MOSFET, 21 A, 650 V, 3-Pin D2PAK Infineon IPB60R165CPATMA1

Currently unavailable
We don’t know if this item will be back in stock, it is being discontinued by the manufacturer.
Packaging Options:
RS Stock No.:
825-9178P
Mfr. Part No.:
IPB60R165CPATMA1
Manufacturer:
Infineon
Find similar products by selecting one or more attributes.
Select all

Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

21 A

Maximum Drain Source Voltage

650 V

Package Type

D2PAK (TO-263)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

165 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3.5V

Minimum Gate Threshold Voltage

2.5V

Maximum Power Dissipation

192 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-30 V, +30 V

Maximum Operating Temperature

+150 °C

Length

10.31mm

Transistor Material

Si

Width

9.45mm

Typical Gate Charge @ Vgs

39 nC @ 10 V

Number of Elements per Chip

1

Minimum Operating Temperature

-55 °C

Height

4.572mm

Series

CoolMOS CP

RoHS Status: Not Applicable

Related links

Be the first to know about our latest products and offers

Email address

The personal information you provide to us when signing up to this mailing list will be processed in line with the Privacy Policy